Static electricity deflecting device, electron beam irradiating apparatus, substrate processing apparatus, substrate processing method and method of manufacturing substrate

ABSTRACT

A substrate processing apparatus which irradiates a substrate under processing with an electron beam and processes the substrate with the electron beam is disclosed. The substrate processing apparatus includes an electron beam generation mechanism which generates the electron beam, first area having a plurality of first static electricity deflecting devices whose thicknesses gradually increase in a traveling direction of the electron beam, and a second area disposed on a downstream side of the electron beam of the first area and having a plurality of second static electricity deflecting devices whose thicknesses are nearly same in the traveling direction of the electron beam. The substrate processing apparatus may further include a plurality of lenses whose thicknesses gradually decrease in the traveling direction of the electron beam, at least one of the plurality of lenses being disposed in each of the first area and the second area.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a static electricity deflecting device,an electron beam irradiating apparatus, a substrate processingapparatus, a substrate processing method, and a method of manufacturinga substrate.

2. Description of the Related Art

In recent years, an exposing method using for example an electron beamhas been accomplished instead of photolithography technology.

In a conventional exposing apparatus using an electron beam, anobjective lens that irradiates a wafer with an electron beam and astatic electricity deflecting device that deflects the position of theelectron beam on the wafer are disposed in a cylindrical column. In thestatic electricity deflecting device, a plurality of deflectingelectrodes are disposed on an inner wall surface of a base membercomposed of cylindrical ceramic such that the deflecting electrodes areelectrically divided as described in for example Japanese PatentApplication Laid-Open No. 2002-231170 (hereinafter this related art isreferred to as Patent Document 1).

In the static electricity deflecting device of such an exposingapparatus, ceramic or the like is exposed on a non-electrode are of theinner wall surface of the cylindrical base member. Thus, a material thatdos not easily discharge static electricity, such as exposed ceramic,tends to be charged up. As a result, an electron beam is deflected to anundesired position, resulting in deterioration of exposure accuracy.

The present invention is made from the foregoing point of view. Anobject of the present invention is to provide a static electricitydeflecting device that suppresses occurrence of charge-up and to anelectron beam irradiating apparatus, a substrate processing apparatus, asubstrate processing method, and a method of manufacturing a substratethat use the static electricity deflecting device.

SUMMARY OF THE INVENTION

To solve the foregoing problem, a static electricity deflecting deviceof the present invention includes a cylindrical member having anelectron beam passing portion, a plurality of deflecting electrodeswhich are disposed on an inner wall surface of the cylindrical memberalong a cylindrical axis thereof and each of which is electricallydivided, a plurality of space portions each of which is connected to agap portion formed by adjacent two of the plurality of deflectingelectrodes, each of the plurality of space portions being disposed at anouter position of the gap portion when each of the plurality of spaceportions is viewed from the electron beam passing portion, and a firstconductive film formed in each of the plurality of space portions

In the structure of the present invention, of electrons that passedthrough the electron beam passing portion, electrons that entered a gapportion of adjacent deflecting electrodes enters into a space portion.The electrons are discharged by the first conduction film. Thus,occurrence of charge-up is suppressed. An electron beam emitted by theelectron beam irradiating apparatus that has such a static electricitydeflecting device is not unnecessarily deflected by charge-up. Thus, theelectron beam can be deflected in a desired manner. An exposing devicethat has such an electron beam irradiating apparatus can perform anexposing process with high accuracy.

In addition, the deflecting electrode and the first conductive film areinsulated.

In such a manner, the deflecting electrode and the conductive film areinsulated.

The space portion is wider than the gap portion.

In such a structure, since the gap portion is narrowed, electrons do noteasily enter from the electron beam passing portion to the space portionand electrons that entered into the space portion do not easily returnto the electron beam passing portion. Electrons that cause charge-up canbe captured in the space portion. In addition, the electron beam is notlargely affected by electrons charged in the insulative area.

In addition, the space portion is curved.

In such a structure, when electrons that entered into the space portioncollide with and bounce from the wall surface of the space portion, theydo not easily return to the electron beam passing portion.

The first conductive film is disposed in an area that is visible wheneach of the plurality of space portions is viewed from the electron beampassing portion.

Thus, it is thought that many electrons that enter into the spaceportion through the gap portion reaches the area that is visible whenthe space portion is viewed from the electron beam passing portion.Thus, the first conductive film is formed at least in the area that isvisible when the space portion is viewed from the electron beam passingportion. Thus, electrons can be securely discharged by the firstconductive film.

In addition, a connection portion that connects the gap portion and thespace portion is disposed.

In such a structure, since the connection portion is disposed betweenthe gap portion and the space portion, the area of which the insulativearea is exposed can be decreased.

Such a structure can be easily manufactured, the manufacturing cost canbe reduced. In addition, adjacent deflecting electrodes can be securelyinsulated.

The connection portion includes a first connection portion that isconnected to the electron beam passing portion, and a second connectionportion that is wider than the first connection portion and narrowerthan each of the plurality of space portions and that is connected toeach of the plurality of space portions.

In such a structure, since a portion that is not coated with theconductive film can be decreased in the space portion, charge-up can besuppressed.

In addition, a second conductive film that electrically connects each ofthe deflecting electrodes and that is disposed in the connection portioninsulated from the first conductive film is provided.

In such a structure, electrons do not easily enter from the electronbeam passing portion to the space portion. In addition, electrons thatentered into the space portion do not easily return to the electron beampassing portion. Moreover, the electron beam is not largely affected byelectrons charged in the insulative area. In addition, since electronsthat entered into the connection portion pass between two secondconductive films, the potential therebetween prevents the electrons fromentering into the space portion.

In addition, a connection conductive film that electrically connect thefirst conductive film disposed in each space portion is provided.

In such a structure, since a plurality of first conductive films can becollectively grounded, the structure of the static electricitydeflecting device can be simplified.

In addition, the first conductive film is grounded.

In such a structure, electricity stored in the first conductive film canbe quickly discharged.

In addition, an insulative area is disposed between the deflectingelectrode and the first conductive film.

In such a structure, the deflecting electrode and the first conductivefilm can be insulated.

In addition, the deflecting electrode and the first conductive film aremade of the same material.

In such a manner, the deflecting electrode and the first conductive filmcan be made of the same material.

In addition, the material of the cylindrical member is ceramic whosevolume resistivity is 10⁷ to 10¹⁰ ohm·cm.

Thus, as the material of the cylindrical member, ceramic whose volumeresistivity is 10⁷ to 10¹⁰ ohm·cm can be used.

In addition, the deflecting electrode is composed of a metal film.

Thus, as the deflecting electrode, a metal film can be used.

In addition, the metal film is a platinum group metal.

In such a manner, a platinum group metal can be used. Thus, when thefront surface of the electrode is cleaned with active oxygen gas, theelectrode is not insulated.

In addition, the platinum group metal is one of ruthenium, rhodium,palladium, osmium, iridium, and platinum.

Thus, as the platinum group metal, ruthenium, rhodium, palladium,osmium, iridium, and platinum can be used.

In addition, the deflecting electrode is made of a conductive oxide.

Thus, as the deflecting electrode, a conductive oxide can be used. Whenthe electron beam irradiating apparatus that has the static electricitydeflecting device is cleaned with a strong oxidizer, the apparatus isnot easily oxidized.

In addition, the conductive oxide is one of ruthenium oxide, iridiumoxide, and platinum oxide.

Thus, as the conductive oxide, ruthenium oxide, iridium oxide, orplatinum oxide can be used.

In addition, a temperature adjustment mechanism that can set the staticelectricity deflecting device at a predetermined temperature is alsoprovided.

In the electron beam irradiating apparatus having the static electricitydeflecting device, when the deflecting electrode is heated by thetemperature adjustment mechanism and the interior of the electron beamirradiating apparatus is cleaned with active oxygen gas, a contaminantthat adheres to the front surface of the deflecting electrode can beeffectively removed.

The electron beam irradiating apparatus according to the presentinvention is an electron beam irradiating apparatus that includes anelectron gun that emits an electron beam and a static electricitydeflecting device that controls the electron beam. The staticelectricity deflecting device includes a cylindrical member having anelectron beam passing portion, a plurality of deflecting electrodes thatare disposed on an inner wall surface of the cylindrical member along acylindrical axis thereof and each of which is electrically divided, aplurality of space portions each of which is connected to a gap portionformed by adjacent two of the plurality of deflecting electrodes, eachof the plurality of space portions being disposed at an outer positionof the gap portion when each of the plurality of space portions isviewed from the electron beam passing portion, and a first conductivefilm formed in each of the plurality of space portions

In the structure of the present invention, of electrons that passedthrough the electron beam passing portion, electrons that entered into agap portion of adjacent deflecting electrodes enters into a spaceportion. The electrons are discharged by the first conduction film.Thus, occurrence of charge-up is suppressed. An electron beam emitted bythe electron beam irradiating apparatus that has such a staticelectricity deflecting device is not unnecessarily deflected bycharge-up. Thus, the electron beam can be deflected in a desired manner.An exposing device that has such an electron beam irradiating apparatuscan perform an exposing process with high accuracy.

As described above, according to the present invention, occurrence ofcharge-up can be suppressed and exposure accuracy can be prevented fromdeteriorating.

These and other objects, features and advantages of the presentinvention will become more apparent in light of the following detaileddescription of a best mode embodiment thereof, as illustrated in theaccompanying drawings.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a plan view showing an outline of the structure of a substrateprocessing apparatus according to an embodiment of the presentinvention;

FIG. 2 is a perspective view describing an outline of the structure ofan atmospheric aligner shown in FIG. 1;

FIG. 3 is a perspective view describing an outline of the structure of aheat processing section shown in FIG. 2;

FIG. 4 is a sectional view describing an outline of the structure of theheat processing section shown in FIG. 2;

FIG. 5 is a sectional view describing an outline of the structure of theatmospheric aligner shown in FIG. 2;

FIG. 6 is a plan view describing an outline of the structure of a vacuumpreparation chamber shown in FIG. 1;

FIG. 7 is a sectional view describing an outline of the structure of areduced pressure transferring chamber shown in FIG. 1;

FIG. 8 is a plan view describing an outline of the structure of anexposure processing section shown in FIG. 1;

FIG. 9 is a flow chart describing a process flow with respect to thestructure of the substrate processing apparatus shown in FIG. 1;

FIG. 10 is a schematic sectional view describing the structure of theexposure processing chamber shown in FIG. 1;

FIG. 11 is a sectional view describing an outline of the structure ofprincipal portions of the exposure processing chamber shown in FIG. 10;

FIG. 12 is a sectional view describing an outline of the structure ofprincipal portions of the exposure processing chamber shown in FIG. 10;

FIG. 13 is a plan view describing an outline of the structure ofprincipal portions of a stage shown in FIG. 12;

FIG. 14 is a schematic diagram describing the structure of a staticelectricity chuck mechanism section of the exposure processing chambershown in FIG. 10;

FIG. 15 is a conceptual diagram showing a basic structure of an electronbeam irradiating apparatus disposed in the exposure processing chambershown in FIG. 10;

FIG. 16 is a perspective view showing an outline of a static electricitydeflecting device of a column of the electron beam irradiating apparatusshown in FIG. 15;

FIG. 17 is a top view showing the static electricity deflecting deviceshown in FIG. 16;

FIG. 18 is a perspective view showing an outline of the staticelectricity deflecting device shown in FIG. 16, the static electricitydeflecting device being cut in an axial direction;

FIG. 19 is a partial plan view showing the static electricity deflectingdevice shown in FIG. 16;

FIG. 20 is a top view showing a static electricity deflecting deviceaccording to a modification of the embodiment;

FIG. 21 is a top view showing a static electricity deflecting deviceaccording to another modification of the embodiment;

FIG. 22 is a top view showing a static electricity deflecting deviceaccording to another modification of the embodiment;

FIG. 23 is a perspective view showing an outline of a lens of the columnof the electron beam irradiating apparatus shown in FIG. 15;

FIG. 24 is a sectional view showing an outline of the lens shown in FIG.23, taken along line A-A′;

FIG. 25 is a plan view describing an outline of the structure of thesubstrate processing apparatus shown in FIG. 1;

FIG. 26 is a sectional view describing an outline of the structure ofthe substrate processing apparatus shown in FIG. 1;

FIG. 27 is a sectional view describing an outline of the structure ofthe substrate processing apparatus shown in FIG. 1;

FIG. 28 is a perspective view describing an outline of the structure ofthe substrate processing apparatus shown in FIG. 1;

FIG. 29 is a plan view describing an outline of the structure of thesubstrate processing apparatus shown in FIG. 1;

FIG. 30 is a schematic diagram describing an outline of the structure ofa control system of the substrate processing apparatus shown in FIG. 1;

FIG. 31 is a plan view showing the structure of a substrate processingapparatus according to another embodiment of the present invention;

FIG. 32 is a perspective view showing an outline of the structure ofHelmholtz coils shown in FIG. 31;

FIG. 33 is a sectional view describing an outline of a staticelectricity deflecting device according to another embodiment of thepresent invention;

FIG. 34 is a sectional view describing an outline of a staticelectricity deflecting device according to another embodiment of thepresent invention;

FIG. 35 is a sectional view describing an outline of a staticelectricity deflecting device according to another embodiment of thepresent invention;

FIG. 36 is a sectional view describing an outline of a manufacturingprocess of the static electricity deflecting device shown in FIG. 17;

FIG. 37 is a sectional view describing an outline of a manufacturingprocess of the static electricity deflecting device shown in FIG. 17;

FIG. 38 is a perspective view describing an outline of a staticelectricity deflecting device according to another embodiment of thepresent invention;

FIG. 39 is a perspective view describing an outline of a staticelectricity deflecting device according to another embodiment of thepresent invention;

FIG. 40 is a perspective view describing an outline of principalsections of the static electricity deflecting device shown in FIG. 39;

FIG. 41 is a perspective view describing an outline of the staticelectricity deflecting device shown in FIG. 40;

FIG. 42 is a perspective view describing an outline of the staticelectricity deflecting device shown in FIG. 40;

FIG. 43 is a perspective view describing an outline of the staticelectricity deflecting device shown in FIG. 39;

FIG. 44 is a perspective view describing an outline of the staticelectricity deflecting device shown in FIG. 40;

FIG. 45 is a schematic diagram describing an outline of the structure ofa substrate processing apparatus according to another embodiment of thepresent invention;

FIG. 46 is a sectional view showing an outline of a lens according toanother embodiment of the present invention;

FIG. 47 is a sectional view showing an outline of a lens according toanother embodiment of the present invention; and

FIG. 48 is a sectional view showing an outline of a lens according toanother embodiment of the present invention.

DESCRIPTION OF PREFERRED EMBODIMENTS

Next, with reference to the accompanying drawings, embodiments of thepresent invention will be described.

FIG. 1 is a schematic diagram showing the structure of a system of forexample an exposing device as a substrate processing apparatus accordingto an embodiment of the present invention. The system of the exposingdevice designated as reference numeral 1 can be freely inline connectedto another device, for example a resist processing device 2 (on a C/Dside of FIG. 1). The resist processing device 2 has a coating devicethat coats resist solution on a process surface of a substrate underprocessing, for example a semiconductor wafer W (the coating device isreferred to as a coater (COT)) and a developing device that develops aresist film formed on the process surface of the semiconductor wafer W(the developing device is referred to as a developer (DEV)). Theexposing device 1 is composed of an atmospheric aligner section 3(designated as S1 in FIG. 1) as a first unit (an interface section)having a linear space section and an exposure processing section 5(designated as S2 in FIG. 1) as a second unit. The atmospheric alignersection 3 conveys a semiconductor wafer W in atmospheric pressure(non-reduced pressure). The exposure processing section 5 conveys asemiconductor wafer W in reduced pressure (non-atmospheric pressure) andperforms an exposing process for the semiconductor wafer W.

Disposed on the resist processing device 2 side are a passing portion10, a receiving portion 11, and a conveying mechanism 12. The passingportion 10 has a stage with an alignment mechanism (not shown) thatphysically holds and aligns a semiconductor wafer W to be passed to theexposing device 1. The receiving portion 11 has a stage with analignment mechanism (not shown) that physically holds and aligns asemiconductor wafer W received from the exposing device 1. The conveyingmechanism 12 is of a self propelled type and freely conveys asemiconductor wafer W to the passing portion 10 and the receivingportion 11.

Disposed on the resist processing device 2 side are also a cassettesection 13 and an operation panel 14 that face an operator's workingspace area A. The cassette section 13 can hold at least one holdingmember for example a cassette that can contain a plurality ofsemiconductor wafers W that are loaded and unloaded by the conveyingmechanism 12. The operation panel 14 is an operation mechanism with adisplay mechanism for a control mechanism that controls the resistprocessing device 2 side.

Disposed on the resist processing device 2 side is also an alignmentmechanism 15 that faces the operator's working space area A side(non-working space area side). The alignment mechanism 15 aligns asemiconductor wafer W to be transferred to the passing portion 10 and/ora semiconductor wafer W received from the receiving portion 11 withreference to a cutout portion for example a notch portion or anorientation flag portion thereof. The conveying mechanism 12 can freelyload and unload a semiconductor wafer W to and from the alignmentmechanism 15.

Disposed in the atmospheric aligner section 3 (designated as S1 inFIG. 1) are a self-propelled conveying mechanism 20 and an alignmentmechanism 21. The self-propelled conveying mechanism 20 can freelyconvey a semiconductor wafer W to the passing portion 10 and thereceiving portion 11 disposed on the resist processing device 2 side.The alignment mechanism 21 is disposed on the working space area A side(on one end side in the longitudinal directions of the atmosphericaligner section 3). The alignment mechanism 21 aligns a semiconductorwafer W that has been received from the passing portion 10 on the resistprocessing device 2 side and/or a semiconductor wafer W to betransferred to the receiving portion 11 on the resist processing device2 side with reference to a cutout portion, for example a notch portionor an orientation flat portion thereof. The self-propelled conveyingmechanism 20 can freely load and unload a semiconductor wafer W to andfrom the alignment mechanism 21.

The alignment accuracy of the alignment mechanism 21 is important toimprove the yield of semiconductor wafers W in the exposure process.Thus, the alignment mechanism 21 has higher alignment accuracy than doesthe alignment mechanism 15 on the resist processing device 2 side and/orthe passing portion 10 or the receiving portion 11 on the resistprocessing device 2 side.

Disposed in the atmospheric aligner section 3 (designated as S1 inFIG. 1) is also a heat processing section 22 that performs a PostExposure Bake (PEB) process as a heat process for a semiconductor waferW that has been exposed in the exposure processing section 5. The heatprocessing section 22 faces the working space area A side of theself-propelled conveying mechanism 20 (on the other end side in thelongitudinal directions of the atmospheric aligner section 3) as shownin FIG. 2, FIG. 3, and FIG. 4.

The heat processing section 22 has a loading/unloading opening 25through which a semiconductor wafer W is loaded and unloaded to and fromthe heat processing section 22. The heat processing section 22 containsa heating plate 26 as a heat process mechanism and a temperatureadjustment plate 27 as a temperature adjustment mechanism. The heatingplate 26 has a heating mechanism, for example a heater 31, thatgenerates predetermined heat, for example in the range from 75° C. to650° C., preferably for example in the range from 120° C. to 300° C.,more preferably for example 250° C. for a semiconductor wafer W. Thetemperature adjustment plate 27 is a temperature adjustment mechanismthat adjusts the temperature of a semiconductor wafer W to apredetermined temperature, for example 23° C. that is nearly the same asthe inner temperature of the atmospheric aligner section 3 or the innertemperature of the resist processing device 2.

Of course, the temperature adjustment plate 27 adjusts the temperatureof a semiconductor wafer W before and after it is conveyed to theheating plate 26. Instead, the temperature adjustment plate 27 mayadjust the temperature of a semiconductor wafer W received from thepassing portion 10 on the resist processing device 2 side by theself-propelled conveying mechanism 20 and/or a semiconductor wafer W tobe conveyed to the receiving portion 11 of the resist processing device2 by the self-propelled conveying mechanism 20 without conveying thesemiconductor wafer W to the heating plate 26. The temperatureadjustment plate 27 may adjust the temperature of a semiconductor waferW before and/or after it is conveyed to the alignment mechanism 21.

As shown in FIG. 3 and FIG. 4, the temperature adjustment plate 27 canbe horizontally moved between a standby position B and an upper positionB of the heating plate 26 by a moving mechanism (not shown). A supportmechanism 30 is disposed below the temperature adjustment plate 27 andat the standby position B of the temperature adjustment plate 27. Thesupport mechanism 30 has a plurality of support pins, for example threesupport pins, that protrude from cutout portions 28 of the temperatureadjustment plate 27 and point-support the rear surface of thesemiconductor wafer W.

In addition, the heating plate 26 has a support mechanism 33 with aplurality of support pins, for example three support pins, that raiseand lower and point-support the rear surface of a semiconductor wafer W.Thus, a semiconductor wafer W conveyed by the self-propelled conveyingmechanism 20 through the loading/unloading opening 25 is received at theup position of the support mechanism 30. The semiconductor wafer W issupported by the support pins 29. Thereafter, when the support mechanism30 is lowered, the semiconductor wafer W on the support points 29 istransferred to the temperature adjustment plate 27.

After the temperature adjustment plate 27 is raised to the up positionof the heat processing section 22, the support mechanism 33 is raised.The semiconductor wafer W on the temperature adjustment plate 27 issupported on the support pins 32. When or after the temperatureadjustment plate 27 is moved to the standby position, the supportmechanism 33 is lowered and the semiconductor wafer W is transferred tothe heating plate 26.

As shown in FIG. 2, a fan filter unit (FFU) 40 is disposed above theatmospheric aligner section 3 (designated as S1 in FIG. 1). The FFU 40generates a down-flow of clean air in the atmospheric aligner section 3.The temperature, the humidity, and/or concentration of a chemicalcompound, for example amine, of the clean air are controlled. Theconcentration of amine is controlled to a predetermined value forexample 1 ppb or less by a filter mechanism (not shown). In addition,the inner pressure of the atmospheric aligner section 3 is controlled toa predetermined value.

Next, a conceptual example of suppressing occurrence of crosscontamination in the atmospheric aligner section 3 (designated as S1 inFIG. 1) will be described. Now, the height of each of a loading opening10 a for a semiconductor wafer W from the passing portion 10 on theresist processing device 2 side and a unloading opening 11 a for asemiconductor wafer W to the receiving portion 11 on the resistprocessing device 2 side is designated as h1. The height of aloading/unloading opening 41 for a semiconductor wafer W on the exposureprocessing section 5 side is designated as h2. The height of aloading/unloading opening 25 for a semiconductor wafer W loaded andunloaded to and from the heat processing section 22 is designated as h3.Since the exposure processing section 5 is operated in reduced pressureand the air cleanness class required in the exposure process is higherthan that for the environment in the resist processing device 2, thecondition of h2≧h1 is kept, preferably h2>h1. In addition, from a pointof view of suppressing the influence of heat from the loading/unloadingopening 25 of the heat processing section 22, the condition of h3≧(h1 orh2) is kept, preferably h3>(h1 or h2).

When the height of the loading opening 10 a and/or the unloading opening11 a and the height of the loading/unloading opening 41 are nearly thesame, it is preferred that they not just face each other, but with aslight deviation.

Next, another conceptual example of suppression of influence of heatfrom the loading/unloading opening 25 of the heat processing section 22will be described with reference to FIG. 5. A wall 50 is disposed aboveand below the loading/unloading opening 25 through which a semiconductorwafer W is loaded to and from the heat processing section 22. The wall50 shields inner atmosphere of the heat processing section 22 from inneratmosphere of the self-propelled conveying mechanism 20. A ventingmechanism, for example a vacuum pump 52, generates an air flow 51 in theheat processing section 22 so that the air flow 51 occurs from thetemperature adjustment plate 27 side to the heating plate 26 side.

With an opening and closing mechanism 54 that can open and close anopening portion of the loading/unloading opening 25, radiation of heatcan be suppressed. With this structure, an area for a down-flow DF inthe atmospheric aligner section 3 can be decreased. As a result, the FFU40 can be downsized. As the merits, the system can be downsized and thefoot print and cost of the apparatus can be decreased. When a controlmechanism 53 (and/or a heat generation mechanism such as a power supplymechanism) of the heat processing section 22 is disposed above the heatprocessing section 22, the influence of heat to a semiconductor wafer Win the atmospheric aligner section 3 can be suppressed.

As shown in FIG. 6, a vacuum preparation chamber 60 is disposed in theexposure processing section 5. The vacuum preparation chamber 60 is asubstrate loading and unloading section through which a semiconductorwafer W is loaded and unloaded by the self-propelled conveying mechanism20 through the loading/unloading opening 41. Disposed at theloading/unloading opening 41 of the vacuum preparation chamber 60 is anopening and closing mechanism 61 that air-tightly seals the interior ofthe vacuum preparation chamber 60. The vacuum preparation chamber 60 hasa holding table 63 with a support mechanism (not shown). The supportmechanism has a plurality of support pins 62 for example three supportpins 62 that point-support the bottom surface of a semiconductor wafer Wthat can be freely transferred by the self-propelled conveying mechanism20.

In addition, the holding table 63 has a temperature adjustment mechanism(not shown). The temperature adjustment mechanism adjusts thetemperature of the holding table 63 to a temperature lower than thetemperatures of sections of the resist processing device 2, for examplethe temperature of a semiconductor wafer W processed by the coatingdevice (coater COT) that coats resist solution on the semiconductorwafer W, the ambient temperature in the resist processing device 2,and/or the ambient temperature in the atmospheric aligner section 3, forexample in the range from a fraction of 1° C. to 3° C., preferably inthe range from 0.1° C. to 0.5° C. As a result, the accuracy of theexposure process can be prevented from deteriorating since a resist filmformed on a semiconductor wafer W can be prevented from shrinking andexpanding.

In addition, at least one image detection mechanism is disposed at anupper position of a semiconductor wafer W held on the holding table 63.For example, a plurality of CCD cameras 65 are disposed so that an imageof at least a peripheral portion of a semiconductor wafer W can befreely detected. These CCD cameras 65 are disposed to detect at least anarrangement angle θ of a semiconductor wafer W. The CCD cameras 65 aredisposed in such a manner that at least one CCD camera 65, preferablytwo CCD cameras 65, are disposed on the Y axis perpendicular to theconveying directions of a semiconductor wafer W by the self-propelledconveying mechanism 20, namely on the X axis and at least one CCD camera65 is disposed with an angle on the Y axis. Thus, based on thearrangement angle θ and reference coordinates pre-registered on the Xand Y axes, namely registered data and detected data are compared. Thedifference is calculated and detected by a control mechanism 166. InFIG. 6, Q denotes the center position of a semiconductor wafer W.

In addition, a conveying opening 66 is disposed in the directions on theY axis of the vacuum preparation chamber 60. A semiconductor wafer W isconveyed to a reduced pressure conveying chamber (that will be describedlater) through the conveying opening 66.

An opening and closing mechanism 67 that can air-tightly close theconveying opening 66 is disposed in the conveying opening 66. The vacuumpreparation chamber 60 has an air venting nozzle 68 through which aventing mechanism, for example an exhaust pump 69, vents the vacuumpreparation chamber 60. Thus, the supply amount of a predetermined gas,for example inert gas such as nitrogen gas, supplied from a gassupplying mechanism (not shown) and the amount of gas vented of theexhaust pump 69 can be freely set between a predetermined degree ofvacuum and atmospheric pressure under the control of the controlmechanism 166.

Next, with reference to FIG. 1 and FIG. 7, the reduced pressureconveying chamber 70 will be described. Disposed in the reduced pressureconveying chamber 70 is a conveying mechanism 72 that conveys asemiconductor wafer W to the vacuum preparation chamber 60 through aconveying opening 71. The conveying mechanism 72 has an arm 73 that is asupport mechanism having a surface contact function of at least oneposition of the peripheral portion of a semiconductor wafer W and/or apoint contact function of a plurality of points on the rear surface ofthe semiconductor wafer W.

Disposed in the reduced pressure conveying chamber 70 is an gas ventingchamber 80 opposite to the vacuum preparation chamber 60 of the reducedpressure conveying chamber 70. The gas venting chamber 80 is connectedto the atmosphere of the reduced pressure conveying chamber 70. An airventing nozzle 81 is disposed below the gas venting chamber 80. Aventing mechanism, for example a vacuum pump 83, vents not only the gasventing chamber 80 but the reduced pressure conveying chamber 70 fromthe air venting nozzle 81 through an air venting path 82.

Thus, venting means is not directly connected to the reduced pressureconveying chamber 70. Since the conveying mechanism 72 is disposed inthe reduced pressure conveying chamber 70 and the venting mechanism isconnected thereto, a problem of which the reduced pressure conveyingchamber 70 becomes large is solved. Thus, the apparatus can be downsizedand slimmed. In addition, even if the vacuum pump 83 and so forth getdefective or the air venting path 82 is maintained, when the gas ventingchamber 80 is removably structured, the maintenance time can be short.With respect to the relationship of a volume 70 a of the reducedpressure conveying chamber 70 and a volume 80 a of the gas ventingchamber 80, the condition of volume 70 a≧volume 80 a is kept, morepreferably volume 70 a>volume 80 a. Thus, the throughput of which thereduced pressure conveying chamber 70 is maintained in a predetermineddegree of vacuum is improved. In addition, the height h4 of the spacesection of the reduced pressure conveying chamber 70 is greater than theheight h5 of the space section of the gas venting chamber 80. As aresult, the gas venting chamber 80 can be vented at high venting speed.

In addition, as shown in FIG. 8, the conveying mechanism 72 of thereduced pressure conveying chamber 70 is controlled by the controlmechanism 166. When there is an error as a result of a calculation basedon data captured by the CCD cameras 65, a conveying angle θ1 of the arm73 for a semiconductor wafer W held by the arm 73 to an exposureprocessing chamber 4 is varied and compensated (the position is adjustedby a rotation operation of the arm 73) based on information of theerror. The semiconductor wafer W held by the arm 73 is conveyed througha loading opening 89 to a stage 91 of the exposure processing chamber 4in which reduced pressure is maintained. In other words, thesemiconductor wafer W is aligned and compensated on the stage 91. Theloading opening 89 of the reduced pressure conveying chamber 70 and theloading opening 89 of the exposure processing chamber 4 can beair-tightly opened and closed.

In addition, the stage 91 in the exposure processing chamber 4 canfreely move a semiconductor wafer W in directions on the X1 axis (leftand right directions shown in FIG. 8) and directions on the Y1 axis(upper and lower directions shown in FIG. 8). When there is an error asa result of a calculation based on data captured by the CCD cameras 65,the control mechanism 166 horizontally aligns the semiconductor wafer Wheld on the stage 91 with respect to the X and Y axes based on theinformation about the error. When the semiconductor wafer W is conveyedby varying the conveying angle θ1 of the arm 73 to the exposureprocessing chamber 4, the stage 91 of the exposure processing chamber 4is moved based on data of which the transfer position of thesemiconductor wafer W by the arm 73 is predicted by the controlmechanism 166.

Thus, the semiconductor wafer W is aligned at steps shown in FIG. 9. Atstep 95, the semiconductor wafer W is aligned on the resist processingdevice 2 side as another device. At step 96, the semiconductor wafer Wis aligned in the atmospheric aligner section 3. At these steps, thesemiconductor wafer W is aligned in atmospheric pressure. Thereafter, atstep 97, the position of the semiconductor wafer W is detected by theCCD cameras 65 of the vacuum preparation chamber 60 in reduced pressure.At step 98, while the rotation angle of the arm 73 of the reducedpressure conveying chamber 70 is being adjusted based on position datadetected by the CCD cameras 65, the semiconductor wafer W held by thearm 73 is aligned in reduced pressure. Thereafter, at step 99, while thestage 91 of the exposure processing chamber 4 as another reducedpressure chamber is being moved on the X and Y axes, the semiconductorwafer W on the stage 91 is aligned in reduced pressure. Thesemiconductor wafer W is aligned at a plurality of positions inatmospheric pressure. Thereafter, the position of the semiconductorwafer W is detected in reduced pressure. In addition, the semiconductorwafer W is aligned at a plurality of positions in reduced pressure.Thus, the accuracy with which the semiconductor wafer W is aligned isimproved.

As shown in FIG. 10, the exposure processing chamber 4 has an electronbeam irradiating apparatus 500 at a ceiling portion. The electron beamirradiating apparatus 500 irradiates a semiconductor wafer W on thestage 91 with an electron beam. The electron beam irradiating apparatus500 has an electron gun 501 and a column 100. As will be describedlater, the column 100 is divided into a GL block 560, a CL block 561, aPL block 562, and a RL/OL block 563. The column 100 also has a ventingmechanism, for example an ion pump 101, that highly vacuum-vents theelectron gun section.

As shown in FIG. 11, a plurality of air vent lines 106 are disposed inthe vertical direction of the column 100. According to this embodiment,the air vent lines 106 gradually decrease degrees of vacuum downwardlyfrom the electron gun 501 to the semiconductor wafer W, for example,10⁻⁷ Pa, 10⁻⁶ Pa, and 10⁻⁵ Pa. The degree of vacuum in an area of whicha semiconductor wafer W is irradiated with an electron beam is set at10⁻⁵ Pa.

In this embodiment, the air vent lines 106 are disposed in areas havingdifferent degrees of vacuum. The vent amounts of the air vent lines 106are varied such that the degrees of vacuum of the areas vary. Since thedegrees of vacuum decrease downwardly, straightness of the electron beamcan be improved or energy can be prevented from lowering.

In this embodiment, the air vent lines 106 are disposed in the areasthat differ in degrees of vacuum and the vent amounts of the air ventlines 106 are varied. Instead, a plurality of air vent lines 106 havingthe same vent amount may be used such that the degrees of vacuum arevaried by changing the number of air vent lines 106. In this case, thedensities of the air vent lines decrease downwardly. In other words, theair vent lines 106 are disposed such that the amounts of ventsubstantially decrease downwardly in the column 100.

In addition, as shown in FIG. 10, the exposure processing chamber 4 hasan air venting duct 102 in a side wall opposite to the reduced pressureconveying chamber 70 of the stage 91. A venting mechanism, for example,a high vacuum pump (turbo molecular pump) 104 that vents the inside ofthe exposure processing chamber 4 through an air vent line 103 isdisposed. Disposed at a ceiling section of the exposure processingchamber 4 is also a mark detection mechanism 105 that optically detectsa mark formed on the process surface of a semiconductor wafer W held onthe stage 91. When necessary, the semiconductor wafer W is finallyaligned by moving the stage 91 on the X and Y axes based on the detectedmark.

In addition, as shown in FIG. 12 and FIG. 13, the stage 91 has a staticelectricity chuck mechanism 110 that electrostatically sucks asemiconductor wafer W. In addition, the stage 91 is made of for examplealumina, which is an insulative material. The stage 91 is conductivelycoated. It is preferred the stage 91 be made of a material that islight, strong, and non-elastic to reduce the weight of the movingportion, increase the characteristic frequency, and reduce the thermalexpansion. In addition, it is preferred that the stage 91 beconductively coated with a thin film. In other words, when the frontsurface of the stage 91 is charged with electrons, they adversely affecta path of an electron beam. Thus, it is preferred that the entiresurface exposed to an electron beam be conductive such that electronsflow to the ground. In addition, when the thickness of the conductivemember is thick, an eddy current occurs, resulting in adverselyaffecting the electron beam.

In addition, a ring-shaped member 111 is disposed around the stage 91.The ring-shaped member 111 is made of an insulative material, forexample alumina. The front surface of the ring-shaped member 111 iscoated with a conductive film. The outer circumferential portion of thering-shaped member 111 has a flat portion 112 whose height is the sameas the height of the process surface of a semiconductor wafer W suckedand held by the static electricity chuck mechanism 110 of the stage 91.In addition, the flat portion 112 is level with the semiconductor waferW. The front surface of the ring-shaped member 111 is coated with anelectron beam refraction protection film as an eddy current protectionmechanism that suppresses the refraction of an electron beam emittedfrom a column 100, namely occurrence of an eddy current. The film ismade of for example titan such as a TiN film. In addition, thering-shaped member 111 and the stage 91 are grounded as shown in FIG.12.

In addition, the stage 91 has a heating mechanism, for example a heater170. The control mechanism 166 can freely adjust the temperature of thesemiconductor wafer W on the stage 91 to a predetermined temperaturealong with a cooling mechanism (not shown). The predeterminedtemperature is lower than the temperature of a semiconductor wafer W ina process section of the resist processing device 2, for example, thecoating device (coater (COT)), that coats resist solution on thesemiconductor wafer W, the inner temperature of the resist processingdevice 2, and/or the inner temperature of the atmospheric alignersection 3. The predetermined temperature is for example a lowtemperature in the range from a fraction of 1° C. to 3° C., preferablyin the range from 0.1° C. to 0.5° C.

In other words, the accuracy of the exposure process can be preventedfrom deteriorating against expansion or shrinkage of the resist filmformed on the semiconductor wafer W. For example, when a load lock (forexample, the vacuum preparation chamber 60) is vacuum-vented, since heatis removed from the semiconductor wafer W, the temperature of thesemiconductor wafer W that has been just conveyed to the stage 91 tendsto be lower than the temperature of the semiconductor wafer W in forexample the atmospheric aligner section 3 before the semiconductor waferW is conveyed to the load lock. Thus, when the temperature of the stage91 is lowered for which the temperature of the semiconductor wafer W islowered by vacuum venting, it is not necessary to wait until thetemperature of the semiconductor wafer W conveyed to the stage becomesstable (namely, expansion of the semiconductor wafer W stops).

In addition, as shown in FIG. 14, the static electricity chuck mechanism110 has a plurality of electrodes, for example two electrodes, that area first electrode 300 and a second electrode 301 buried in an insulativemember 299 made of an insulator such as ceramics. A conductive needle303 that is a conductive mechanism (grounding mechanism) is disposedoutside the second electrode 301. The conductive needle 303 can befreely moved in a through-hole 302 formed in the insulative member 299and contacted to a predetermined position on the rear surface of thesemiconductor wafer W. In addition, a raising and lowering mechanism(first conductive needle contacting mechanism) 304 is disposed. Theraising and lowering mechanism 304 raises and lowers the conductiveneedle 303 so that it contacts the rear surface of the semiconductorwafer W with a predetermined pressure.

In addition, a conductive needle 305 that is a conductive mechanism isdisposed at a more outer peripheral position on the process surface ofthe semiconductor wafer W than the conductive needle 303 by apredetermined distance, for example X2 shown in FIG. 14. The conductiveneedle 305 can be contacted to a resist film area of the process surfaceof the semiconductor wafer W. In addition, a raising and loweringmechanism (second conductive needle contacting mechanism) 306 isdisposed. The raising and lowering mechanism 306 raises and lowers theconductive needle 305 so that it contacts the process surface of thesemiconductor wafer W with a predetermined pressure.

With respect to contacting of the conductive needle 303 and theconductive needle 305 to a semiconductor wafer W, the conductive needle303 is pressed by the raising and lowering mechanism 304 so that theconductive needle 303 contacts at least a nitride film formed on therear surface of the semiconductor wafer W, for example an SiN film, andan oxide film, for example a SiO₂ film as a base film thereof. Thus, theraising and lowering mechanism 304 needs to have a pressing force thatcauses the conductive needle 303 to pierce the SiN film. Instead, theraising and lowering mechanism 304 may cause the conductive needle 303to pierce a plurality of films for example SiN and SiO₂, and contact Si.Si 312 is the material of the semiconductor wafer W itself. Thus, staticelectricity charged in the semiconductor wafer W can be effectivelyremoved from the rear surface thereof by the conductive needle 303. Inaddition, since the conductive needle 303 does not reach Si 312, whichis the material of the semiconductor wafer W itself, the problem ofbreakage and so forth of the semiconductor wafer W itself can be solved.

On the other hand, since the conductive needle 303 needs to pierce theSiN film 310, which is a harder film than a film on the process surfaceside, as shown in FIG. 18, a conductive hard material, for example aplurality of pieces of a conductive diamond 331, are buried in a tipportion 330 of the conductive needle 303. The material of the tipportion 330 or the material of the conductive needle 303 may be tungstencarbide, alumina titanium carbide type ceramic (Al₂O₃+TiC), thermite(TiC+TiN), tungsten, palladium, iridium, or beryllium-copper alloybesides conductive diamond. Important characteristics for the materialof the conductive needles are conductive, hard, and nonmagnetic.

With respect to the contacting of the conductive needle 305 on theprocess surface side of the semiconductor wafer W, the conductive needle305 is contacted to for example a circuit pattern area formed on theprocess surface side of the semiconductor wafer W, a resist film formedon the circuit pattern area, and an antistatic film formed on the resistfilm. As another example, the conductive needle is contacted to thecircuit pattern area formed on the process surface side of thesemiconductor wafer W, a conductive film formed on the circuit patternarea, and the resist film formed on the conductive film.

As another example, the conductive needle 305 is contacted to thecircuit pattern area formed on the process surface side of thesemiconductor wafer W, a conductive film formed in the circuit patternarea, and the resist film 316 formed in the circuit pattern area.

Thus, the semiconductor wafer W is not directly contacted to Si of thesemiconductor wafer W itself. Instead, since the conductive needle 305is contacted to a conductive film formed on Si of the semiconductorwafer W itself, static electricity charged in the semiconductor wafer Wcan be effectively removed from the process surface side by theconductive needle 305. In addition, since the conductive needle 305 doesnot reach Si, which is the material of the semiconductor wafer W itself,the problem of breakage and so forth of the semiconductor wafer W itselfcan be solved.

In addition, since the conductive needle 305 does not reach Si, which isthe material of the semiconductor wafer W itself, a contact hole of theconductive needle 305 formed in the circuit pattern area and the resistfilm can be decreased. Thus, the contacting of the conductive needle 305does not largely affect the later processes, for example coating ofdeveloping solution on the semiconductor wafer W in the developingprocess of the resist processing device 2. As a result, the yield ofsemiconductor wafers W can be improved.

In addition, as shown in FIG. 14, the conductive needle 303 and theconductive needle 305 can be freely connected to a first switch terminal320, a second switch terminal 321, or a third switch terminal 322selected through a switch mechanism, for example a switch SW1. The firstswitch terminal 320 is connected to a current detection mechanism, forexample an ammeter, that detects a current that flows in the conductiveneedle 303 and/or the conductive needle 305. The second switch terminal321 is connected to the ground. Thus, the conductive needle 303 and/orthe conductive needle 305 is grounded through the second switch terminal321. The third switch terminal 322 is connected to a power supply VP5that applies a predetermined voltage to the conductive needle 303 and/orthe conductive needle 305.

The term “and/or” of the conductive needle 303 and/or the conductiveneedle 305 means that the conductive needle 303 and the conductiveneedle 305 are connected and also they are connected to the first switchterminal 320, the second switch terminal 321, or the third switchterminal 222. Instead, for each of the conductive needle 303 and theconductive needle 305, the first switch terminal 320, the second switchterminal 321, and the third switch terminal 322 may be independentlyprovided.

In addition, data of a current value in the ammeter connected to thefirst switch terminal 320 can be monitored by the control mechanism 166.In addition, for convenience, in the power supply connected to the thirdswitch terminal 322, a negative voltage is applied to the conductiveneedle 303 and the conductive needle 305. Instead, a positive voltagemay be applied to the conductive needle 303 and the conductive needle305. When necessary, the polarities of the voltages applied may bechanged.

In addition, the first electrode 300 is connected to a switch mechanism,for example a switch SW2, and another switch mechanism, for example aswitch SW3. The switch SW3 can freely connect the first electrode 300 toa power supply VP1 that applies a predetermined negative voltage theretoor a power supply VP2 that applies a predetermined positive voltagethereto. In addition, the power supply VP1 and the power supply VP2 canbe freely connected to a power supply VP4 that generates a referencevoltage through a switch mechanism, for example a switch SW4. The switchSW4 can freely select one of the power supply VP4 side and the GND side.Thus, when the switch SW4 selects the GND, the reference voltage becomes0 V.

In addition, the second electrode 301 can be freely connected to a powersupply VP3 that applies a predetermined negative voltage through aswitch mechanism, for example a switch SW5. In addition, the powersupply VP3 can be freely connected to the power supply VP4 that appliesthe reference voltage through a switch mechanism, for example the switchSW4. Likewise, the switch SW4 can freely select one of the power supplyVP4 side and the GND side. Thus, when the switch SW4 selects the GND,the reference voltage becomes 0 V.

In the foregoing description, the power supply VP1 applies apredetermined negative voltage; the power supply VP2 applies apredetermined positive voltage; and the power supply VP3 applies apredetermined negative voltage. In contrast, the power supply VP1 mayapply a predetermined positive voltage; the power supply VP2 may apply apredetermined negative voltage; and the power supply VP3 may apply apredetermined positive voltage. In the drawing, the power supply VP4applies a negative reference voltage. Instead, the power supply VP4 mayapply a positive reference voltage. When necessary, the polarities ofthe voltages applied may be changed.

Thus, the contact position that the conductive needle 303 contacts onthe rear surface of the semiconductor wafer W is closer to the center ofthe semiconductor wafer W than the contact position that the conductiveneedle 305 contacts on the process surface of the semiconductor wafer W.

Although the conductive needles are used to remove electrons stored onthe semiconductor wafer W or potential of the static electricity chuckmechanism, since the resist film of the semiconductor wafer W is exposedby irradiating it with an electron beam, the distance of the conductiveneedle 305, which contacts on the process surface from the center of thesemiconductor wafer W, is limited. In addition, the conductive needle305 contact the process surface of the semiconductor wafer W above theinsulative member 299. In other words, when the contact position of theconductive needle 305 contacts the process surface of the semiconductorwafer W apart from the insulative member 299, the pressing force of theconductive needle 305 causes the semiconductor wafer W to deviate fromthe insulative member 299 or fly.

Next, with reference to FIG. 15, the structure of the electron beamirradiating apparatus 500 of the exposure processing chamber 4 will bedescribed in detail.

FIG. 15 is a conceptual diagram showing a basic structure of theelectron beam irradiating apparatus 500.

As shown in FIG. 15, the electron beam irradiating apparatus 500 has theelectron gun 501 and the column 100. The electron gun 501 irradiates asemiconductor wafer W with an electron beam 502.

The column 100 is divided into four blocks of a gun lens (GL) block 560,a condenser lens (CL) block 561, a projection lens (PL) block 562, and areduce lens/object lens (RL/OL) block 563. The PL block 562 is disposedbetween a first forming aperture S1-AP553 and a second forming apertureS2-AP555. The first forming aperture S1-AP553, the second formingaperture S2-AP 555, and the air vent lines 106 satisfy the condition ofwhich the number of air vent lines 106 disposed between the electron gun501 and the first forming aperture S1-AP 553 is larger than the numberof air vent lines 106 disposed between the first forming aperture S1-AP553 and the second forming aperture S2-AP 555 and/or the interval of theair vent lines 106 disposed between the electron gun 501 and the firstforming aperture S1-AP 553 is smaller than the interval of the air ventlines 106 disposed between the first forming aperture S1-AP 553 and thesecond forming aperture S2-AP 555.

The GL block 560 is an area in which the electron beam 502 emitted fromthe electron gun 501 is focused. The GL block 560 includes a gun lens511, a first adjustment static electricity deflecting device (AL1)521and a gun lens aperture (GL-AP)551. The electron beam 502 is focused bythe GL 511. The first adjustment static electricity deflecting device(AL1) 521 adjusts the position of the electron beam 502 at the center ofthe column 100. The GL-AP 551 cuts the largest current portion from theelectron beam 502.

The CL block 561 is an area in which the first forming aperture S1-AP553 is irradiated with the electron beam. The CL block 561 includes asecond adjustment static electricity deflecting device (AL2) 522, acondenser lens aperture (CL-AP) 552, a CL 512, and a third adjustmentstatic electricity deflecting device (AL3) 523.

The electron beam 502 that passed through the GL block 560 is adjustedby the AL2 522 such that the electron beam 502 passes through the centerof the CL 512. The electron beam 502 is adjusted by the CL-AP 552 andthe CL 512 such that the number of electrons of the electron beam 502becomes a desired value, namely desired brightness is obtained. Thethird adjustment static electricity deflecting device (AL3) irradiatesthe first forming aperture (S1-AP) 553 with the electron beam 502.

The S1-AP553 forms the electron beam 502 in a desired shape. Theelectron beam 502 that passed through the CL block 561 is formed in adesired shape by the S1-AP553. A plurality of static electricitydeflecting devices disposed between the electron gun 501 and the firstforming aperture S1-AP 553 (first area), for example the staticelectricity deflecting devices 521, 522, and 523 have differentthicknesses (widths) as shown in FIG. 15. In this embodiment, thethicknesses of the static electricity deflecting devices increase in thedirection from the electron gun 501 to the semiconductor wafer W, or inthe traveling direction of the electron beam emitted from the electrongun 501 such that the electron beam is properly controlled.

The PL block 562 is an area in which an image of the S1-AP 553 isfocused on the second forming aperture S2-AP 555. The PL block 562includes a first blanking static electricity deflecting device (BLK1)531, a fourth adjustment static electricity deflecting device (AL4) 524,a blanking aperture (BLK-AP) 554, a fifth adjustment static electricitydeflecting device (AL5) 525, a second blanking static electricitydeflecting device (BLK2) 532, a sixth adjustment static electricitydeflecting device (AL6) 526, a PL 513, and a first character projection(CP) static electricity deflecting device (CP1)541. A plurality ofstatic electricity deflecting devices disposed between the first formingaperture S1-AP 553 and the BLK-AP 554 (second area), for example thestatic electricity deflecting devices 531 and 524 have differentthicknesses (widths) as shown in FIG. 15. In this embodiment, thethicknesses of the static electricity deflecting devices decrease in thedirection from the electron gun 501 to the semiconductor wafer W, or inthe traveling direction of the electron beam emitted from the electrongun 501 such that the electron beam is properly controlled.

The electron beam 502 that passed through the S1-AP 553 is deflected bythe blanking static electricity deflecting device 531 such that anunnecessary portion of the semiconductor wafer W is not exposed. Theelectron beam 502 is adjusted by the fourth adjustment staticelectricity deflecting device (AL4) 524 such that the electron beam 502passes through the BLK-AP 554 and the electron beam is deflected on theBLK-AP 554. Thereafter, the electron beam is cut such that it dose notreach an unnecessary portion on the semiconductor wafer W.

The electron beam 502 that passed through the BLK-AP 554 is adjusted bythe fifth adjustment static electricity deflecting device (AL5) 525 andthe sixth adjustment static electricity deflecting device (AL6) 526 suchthat the electron beam 502 passes through the center of the PL. The PL513 focuses an image of the S1-AP 553 on the second forming apertureS2-AP 555. The electron beam 502 is selected as any character or anelectron beam having any size on the S2-AP 555 by the first CP staticelectricity deflecting device (CP1) 541. A plurality of staticelectricity deflecting devices disposed between the BLK-AP 554 and thesecond forming aperture S2-AP 555 (third area), for example the staticelectricity deflecting devices 525 and 526 have the same thickness(width) as shown in FIG. 15. In this embodiment, the static electricitydeflecting devices are structured in the direction from the electron gun501 to the semiconductor wafer W, or in the traveling direction of theelectron beam emitted from the electron gun 501 such that the electronbeam is properly controlled. Taking account of another staticelectricity deflecting device, for example the first CP staticelectricity deflecting device 541, the thickness of the first CP staticelectricity deflecting device 541 is larger than the thickness of eachof the static electricity deflecting devices 525 and 526 such that theelectron beam is properly controlled. Since the static electricitydeflecting devices 525 and 526 having the same thickness are used andthe static electricity deflecting device 541 whose thickness is largerthan the thickness of each of the static electricity deflecting devices525 and 526 is also used in combination, the electron beam can beproperly controlled.

The second forming aperture S2-AP 555 is an aperture that forms theelectron beam in any character and in any size. The electron beam 502that passed through the PL block 562 is formed in any shape by the S2-AP555.

The RL/OL block 563 is a region in which an image of the S2-AP 555 isfocused on the semiconductor wafer W. The RL/OL block 563 includes asecond CP static electricity deflecting device (CP2) 542, an RL 514, andan OL 571. The electron beam 502 that passed through the second formingaperture S2-AP 555 is adjusted by the second CP static electricitydeflecting device (CP2) 542 such that the electron beam 502 passesthrough the center of the RL. The electron beam 502 is transferred onthe semiconductor wafer W by the RL 514. As shown in FIG. 15, thethickness (width) of the second CP static electricity deflecting device542 is nearly the same as or larger than the thickness (width) of thefirst CP static electricity deflecting device 541 such that the electronbeam is properly controlled. As will be described later, the thickness(width) of the second CP static electricity deflecting device 542 islarger than that of the other static electricity deflecting devicesexcept for the first CP static electricity deflecting device 541 suchthat the electron beam is properly controlled. The thicknesses of thestatic electricity deflecting devices are not limited to the foregoingexample. Instead, the thicknesses of the static electricity deflectingdevices can be properly selected such that the electron beam is properlycontrolled when necessary.

The number of deflecting electrodes of each of the adjustment staticelectricity deflecting devices 521 to 526 is plural, for example four.The number of deflecting electrodes of each of the blanking staticelectricity deflecting devices 531 and 532 is plurality, for exampletwo. The number of deflecting electrodes of each of the CP staticelectricity deflecting devices 541 and 542 is plurality, for exampleeight. Thus, the column 100 has a plurality of static electricitydeflecting devices whose numbers of deflecting electrodes are different.Static electricity deflecting devices whose numbers of deflectingelectrodes are large are disposed on the semiconductor wafer W side,whereas static electricity deflecting devices whose numbers ofdeflecting electrodes are small are disposed on the electron gun 501side. In addition, the blanking static electricity deflecting devices531 and 532 having two deflecting electrodes are disposed between theadjustment static electricity deflecting devices 521 to 526 having fourdeflecting electrodes. When the electron beam is deflected by a staticelectricity deflecting device, the distortion of the electron beam isreversely proportional to the number of deflecting electrodes. However,when the number of deflecting electrodes of a static electricitydeflecting device is large, it becomes difficult to form the deflectingelectrodes of the static electricity deflecting device.

Thus, according to this embodiment, the number of deflecting electrodesof the static electricity deflecting devices, disposed in thesemiconductor wafer W area, where distortion of deflection of theelectron beam largely affects exposure accuracy, is plural, for exampleeight. The number of deflecting electrodes of the CL axis and PL axisadjustment static electricity deflecting devices, where distortion ofdeflection of the electron beam does not largely affect exposureaccuracy, is plural, for example four. The number of deflectingelectrodes of the static electricity deflecting devices that have anunnecessary electron beam shut-out function is plural, for example two.Thus, the manufacturing cost can be reduced. With respect to the numberof deflecting electrodes of the static electricity deflecting devices,in the direction from the electron gun 501 to the semiconductor wafer W,or in the traveling direction of the electron beam of the electron gun501, there are an area of at least one type of a static electricitydeflecting device having a two's multiple or an even multiple ofdeflecting electrodes, for example 2×2=4 deflecting electrode, forexample an area from the electron gun 501 to the first forming apertureS1-AP 553, an area of a plurality of types of static electricitydeflecting devices having a two's multiple of deflecting electrodes, forexample 2×1=2 deflecting electrodes and 2×2=4 deflecting electrodes, forexample an area from the first forming aperture S1-AP 553 to the BLK-AP554, namely a combination of static electricity deflecting deviceshaving a two's integer multiple of deflecting electrodes or an evenmultiple of deflecting electrodes, for example 2×1=2 deflectingelectrodes and 2×2=4 deflecting electrodes, an area of a plurality of,for example three or more types of static electricity deflecting deviceshaving 2×4 deflecting electrodes, for example an area from the firstforming aperture S1-AP 553 to the S2-AP 555, and an area of at least onetype of a static electricity deflecting device having a two's integermultiple of deflecting electrodes or an even multiple of deflectingelectrodes, for example 2×4=8 deflecting electrodes, for example an areafrom the S2-AP 555 to the semiconductor wafer W (fourth area). Instead,of course, at least one of the static electricity deflecting devices mayhave a two's odd multiple of deflecting electrodes rather than two'seven multiple of deflecting electrodes, for example six deflectingelectrodes or 10 deflecting electrodes. Instead, a static electricitydeflecting devices having a two's odd multiple of deflecting electrodes,for example six deflecting electrodes or 10 deflecting electrodes may beused in combination. Instead, at least one of the static electricitydeflecting devices may have a three's even multiple, a three's integermultiple, or a three's odd multiple of deflecting electrodes rather thana two's even multiple of deflecting electrodes. Instead, a staticelectricity deflecting device having a three's even multiple, a three'sinteger multiple, or a three's odd multiple of deflecting electrodes maybe used in combination.

The CP static electricity deflecting devices 541 and 542 are longer thanother static electricity deflecting devices. In other words, the staticelectricity deflecting devices are composed of cylindrical members. Theaxial length of each of the CP static electricity deflecting devices 541and 542 is larger than that of each of other static electricitydeflecting devices. When the length of a static electricity deflectingdevice is large, the deflection amount of the electron beam can beincreased at low voltage. Thus, the length of each of the staticelectricity deflecting devices on the semiconductor wafer W side islarger than that of each of other static electricity deflecting devicessuch that the electron beam is emitted to a desired position on thesemiconductor wafer W.

In this embodiment, there are two blanking static electricity deflectingdevices that sandwich the BLK-AP 554. However, when a blanking staticelectricity deflecting device is disposed between the BLK-AP 554 and theelectron gun 501, the electron beam can be cut. As in this embodiment,when the second blanking static electricity deflecting device (BLK2) 532is also disposed between the BLK-AP 554 and the semiconductor wafer W,the amount of leakage of the electron beam that is cut can be decreased.As described above, although the first blanking static electricitydeflecting device (BLK1) 531 and the second blanking static electricitydeflecting device BLK2 532 have two deflecting electrodes each, thesedeflecting electrodes match when these static electricity deflectingdevices are viewed from the top. With respect to the positions of thestatic electricity deflecting devices corresponding to a electron beampassing portion 609, which will be described later, the center positionof each of the deflecting electrodes matches the passing line of theelectron beam such that the electron beam passes from the electron gun501 to the semiconductor wafer W or in the traveling direction of theelectron beam from the electron gun 501. In addition, a space portion608 of each deflecting electrode of each static electricity deflectingdevice is formed such that the space portion 608 matches the passingline of the electron beam.

The diameter of the electron beam passing portion of each of the staticelectricity deflecting devices except for the second blanking staticelectricity deflecting device BLK2 532 is nearly the same. In contrast,the diameter of the electron beam passing portion of the electron beampassing portion of the second blanking static electricity deflectingdevice BLK2 532 is larger than that of each of the static electricitydeflecting devices. In other words, with the second blanking staticelectricity deflecting device BLK2 532, deflecting sensitivity isadjusted such that the two blanking static electricity deflectingdevices operate as a diaphragm of the electron beam.

A voltage of −100 V to 100 V is designed to be able to be applied to theadjustment static electricity deflecting devices 521 to 526. A voltageof for example −20 V to 20 V, which is lower in an amplitude controlwidth than the voltage applied to the adjustment static electricitydeflecting devices 521 to 526, is designed to be able to be applied tothe blanking static electricity deflecting devices 531 and 532. Avoltage of for example −40 V to 40 V, which is lower in an amplitudecontrol width than the voltage applied to the adjustment staticelectricity deflecting devices 521 to 526, and larger in an amplitudecontrol width than the voltage applied to the blanking staticelectricity deflecting devices 531 and 532, is designed to be able to beapplied to the CP static electricity deflecting devices 541 and 542.These static electricity deflecting devices are electrically independentfrom each other. They can be independently controlled. Two voltages withthe same potential and different polarities, for example, −40 V and +40V, can be applied to opposite electrodes.

The static electricity deflecting devices each have a temperatureadjustment mechanism (not shown) such that they can be set at apredetermined temperature. The temperature adjustment mechanism allowsan unnecessary matter to be prevented from adhering on each of thestatic electricity deflecting devices.

As shown in FIG. 15, the lenses, which are the GL 511, the CL 512, thePL 513, and the RL 514, are formed such that their thicknesses arereversely proportional to the distances from the semiconductor wafer W.A predetermined voltage, for example −4200 V to −4900 V, is designed tobe able to be applied to the GL 511. A predetermined voltage, forexample −2800 V, is designed to be able to be applied to the PL 513. Apredetermined voltage, for example −2800 V, is applied to the PL 513. Apredetermined voltage, for example −4300 V, is designed to be able to beapplied to the RL 514. A predetermined voltage, for example −4300 V, isdesigned to be able to be applied to the RL 514.

Next, with reference to FIG. 16 to FIG. 19, an example of the structureof the foregoing static electricity deflecting devices will bedescribed. In this example, a static electricity deflecting devicehaving four deflecting electrodes used as an adjustment staticelectricity deflecting device will be described. The structure of astatic electricity deflecting device having four deflecting electrodesis basically the same as the structure of a static electricitydeflecting device having two deflecting electrodes or eight deflectingelectrodes except that their numbers of deflecting electrodes aredifferent. In the drawings, for easy understanding, their scales aredifferent.

FIG. 16 is a perspective view showing an outline of a static electricitydeflecting device of the column 100 of the electron beam irradiatingapparatus shown in FIG. 16. FIG. 17 is a top view showing the staticelectricity deflecting device shown in FIG. 16. FIG. 18 is a perspectiveview showing an outline of the static electricity deflecting deviceshown in FIG. 16, taken in the axial direction. FIG. 19 is a partialplan view showing the static electricity deflecting device shown in FIG.16.

As shown in FIG. 16 and FIG. 17, the adjustment static electricitydeflecting device 521 (522 to 526) includes a cylindrical member 612,which has the electron beam passing portion 609; four deflectingelectrodes 603 disposed radially along the cylindrical axis on the innerwall surface of the cylindrical member 612 and electrically divide; fourspace portions 608 each of which is connected to a gap portion 611between the two corresponding deflecting electrodes 603 and is disposedat an outer position of the corresponding gap portion 611 than theelectron beam passing portion 609 when each of the space portions 608are viewed from the electron beam passing portion 609; four connectionportions 607 each of which connects the corresponding gap portion 611and the corresponding space portion 608; four first conduction films 602each of which is formed along the cylindrical axis on the wall surfaceof the corresponding space portion 608; four connection conductive films703 each of which has a nearly ring-shaped section and whichelectrically connects the corresponding first conductive film 602; andfour voltage input terminals 605 each of which applies a voltage to thecorresponding deflecting electrode 603. Formed on the wall surface ofeach of the connection portions 607 is a second conductive film 610 thatis electrically connected to the corresponding deflecting electrode 603.The second conductive film 610 is formed from the corresponding gapportion 611 to the corresponding space portion 608. The secondconductive film 610 may protrude into the space portion 608 to someextent as long as the second conductive film 610 does not contact thefirst conductive film 602.

The cylindrical member 612 is composed of three layers of an inner layer606, a middle layer 604, and an outer layer 601, each of which iscomposed of the same material, ceramic. The deflecting electrodes 603and the second conductive films 610 that are electrically connected areinsulated from the first conductive films 602 and the connectionconductive films 703 that are electrically connected. In thisembodiment, the deflecting electrodes 603 and the second conductivefilms 610 are insulated from the first conductive films 602 and theconnection conductive films 703 by the middle layer 604 as an insulativearea. In the space portions 608 formed in the middle layer 604, ceramicis exposed. In other words, the wall surface of each of the spaceportions 608 is composed of a conductive area on which the correspondingfirst conductive film 602 is formed and an insulative area in whichceramic is exposed. The connection conductive films 703 provide a shieldeffect that prevents the static electricity deflecting device 521 frombeing affected by an external electric field.

The deflecting electrodes 603 and the second conductive films 610 areformed on inner wall surfaces and divided surfaces of four dividedportions of the inner layer 606, respectively. The deflecting electrode603 and the second conductive film 610 formed on one of the four dividedportions of the inner layer 606 are electrically insulated from anotherfour divided portions. The connection portions 607 each have a firstconnection portion 607 a connected to the electron beam passing portion609 and a second connection portion 607 b connected to the correspondingspace portion 608 that is wider than the first connection portion 607 a.Although the deflecting electrodes 603 and the second conductive films610 are formed on the inner wall surfaces and the divided surfaces ofthe four axially-divided portions of the cylindrical inner layer 606,when necessary, a conductive film may not be formed on the surface(upper surface and/or the lower surface) of the outer layer 601.Instead, a conductive film electrically connected to the connectionconductive film 703 and/or the first conductive film 602 may be formedon the surface (upper surface and/or the lower surface) of the outerlayer 601.

Thus, when the width of each of the connection portions 607 on theelectron beam passing portion 609 side (namely, each of the firstconnection portions 607 a) is decreased, the amount of the electron beamthat enters into the space portions 608 can be decreased. On the otherhand, when the width of each of the second connection portions 607 onthe space portion 608 side (namely, each of the second connectionportions 607 b) is increased, the exposed area of ceramic of the middlelayer 604 on which the first conductive films is not formed in the spaceportions 608 can be decreased. In addition, since the second conductivefilm 610 is formed in each of the connection portions 607, electronsthat enter into the corresponding connection portion 607 pass betweentwo second conductive films 610. Thus, a potential between the twosecond conductive films 610 further prevents electrons from enteringinto the corresponding space portion 608.

The space portions 608 are wider than the connection portions 607. Thespace portions 608 have a nearly circular section. The first conductivefilms 602 are electrically insulated from the second conductive films610. The first conductive films 602 are formed at least in an area thatis visible when each of the space portions 608 is viewed from theelectron beam passing portion 609. Although the space portions 608 havea circular section in this example, the space portions 608 may have asquare section, an elliptic section or a section combination thereof.The volume, diameter, or distance of each of the space portions 608 needto be designed such that no abnormal discharge takes place. It ispreferred that the volume that substantially forms each of the spaceportions 608 be larger than the volume of each of the connectionportions 607, which will be described later. More specifically, in eachof the connection portions 607 and the space portions 608, the volumethat substantially forms the first connection portion 607 a of theconnection portion 607, the volume that substantially forms the secondconnection portion 607 b, and the volume that substantially forms thespace portion 608 satisfies the condition of the volume thatsubstantially forms the first connection portion 607 a<the volume thatsubstantially forms the second connection portion 607 b<the volume thatsubstantially forms the space portion 608. When the first connectionportion 607 a of the connection portion 607 is a substantial connectionportion, if the second connection portion 607 b is processed as thefirst space portion, the space portion 608 can be processed as a secondspace portion. When each of the space portions 608 has a square section,it is preferred that the first conductive film 602 be formed in an areathat is visible when each of the space portions 608 is viewed from theelectron beam passing portion 609.

The connection conductive films 703 formed between the outer layer 601and the middle layer 604 are electrically connected to the four firstconductive films 602. Thus, when any one position of the connectionconductive films 703 and the first conductive films 602 is grounded, allthe first conductive films 602 can be collectively grounded. As aresult, the structure of the static electricity deflecting device 521(522 to 526) can be simplified.

In addition, the space portion 608 can be used as air vent openingsthrough which the degree of vacuum of the electron beam passing portion609 is increased. In addition, the space portions 608 can be also usedas gas vent openings when the exposure processing chamber 4 is cleaned.Moreover, for safety reason, it is necessary to provide the spaceportions 608 with abnormal discharge detection mechanisms that detectabnormal discharge therein. In addition, as described above, the spaceportions 608 may be provided with temperature adjustment mechanisms, forexample heaters, which keep the space portions 608 at a predeterminedtemperature to suppress depositing of unnecessary matter.

In the static electricity deflecting device 521 (522 to 526) of thisembodiment, the space portions 608 are formed such that they areconnected to the electron beam passing portion 609 through thecorresponding gap portions 611 formed between adjacent deflectingelectrodes 603. In addition, the first conductive films 602 are formedin the space portions 608. Thus, electrons that entered from theelectron beam passing portion 609 into the space portions 608 do noteasily return to the electron beam passing portion 609. Thus, the spaceportions 608 function as electron capturing areas. Electrons that passedthrough each of the gap portions 611 and that are stored in thecorresponding space portion 608 are quickly discharged by thecorresponding first conductive film 602. Thus, since occurrence ofcharge-up can be suppressed, an electron beam can be deflected in adesired shape. As a result, deterioration of the exposure accuracy dueto charge-up can be prevented.

As described above, it is preferred that each of the first conductivefilms 602 be formed at least in an area that is visible when each of thespace portion 608 is viewed from the electron beam passing portion 609.Electrons that passed through the gap portion 611 and entered into thespace portion 608 are nearly securely captured by the first conductivefilm 602.

When electrons pass through each of the connection portions 607 andreached the corresponding space portion 608, the traveling direction ofthe electrons is restricted. Thus, when the first conductive film 602 isformed at least in an area that is visible when each of the spaceportion 608 is viewed from the electron beam passing portion 609, theelectrons can be nearly securely captured by the first conductive film602.

To electrically insulate each of the space portion 608 and thecorresponding deflecting electrode 603, there is an area in whichceramic of the middle layer 604 is exposed in the space portion 608. Asthe material of the outer layer 601, the middle layer 604, and the innerlayer 606 of the cylindrical member 612, it is preferred to use amaterial that satisfies the conditions of which the CR value (Crepresents capacitance, whereas R represents resistance) of the scanningfrequency of the electron beam is equal to or smaller than 100 μm, thecapacitance C is equal to or smaller than 100 pF, and the resistance Ris 10⁶ to 10⁷ ohms. When the capacitance C is 100 pF, even if charge-upoccurs in the area in which ceramic is exposed, the electrons tend to beeasily discharged before next electrons enter. Thus, charge-up can besuppressed to some extent.

In this embodiment, since the space portions 608 have a curved section,electrons that entered into the space portions 608 do not easily returnto the electron beam passing portion 609 although the electrons collideand bounce.

In addition, in this embodiment, since each of the space portions 608 isdesigned to be larger than the widths of the corresponding gap portion611 and the corresponding connection portion 607, electrons that enteredinto each of the space portions 608 do not easily return to the electronbeam passing portion 609. Thus, the electrons do not adversely affect anelectron beam that passes through the electron beam passing portion 609.

In this embodiment, each of the connection portions 607 has the firstconnection portion 607 a and the second connection portion 607 b, whichdiffer in their widths. Thus, in each of the space portions 608, an areain which ceramic is exposed in the middle layer 604, namely an area notcoated with the first conductive film 602, can be decreased. As aresult, charge-up can be suppressed.

In this embodiment, the first conductive films 602 and the connectionconductive films 703, which are electrically connected, are grounded.Instead, when a plus potential is applied to the first conductive films602, electrons can be securely captured.

In the exposure processing chamber 4, the first conductive films 602 ofeach of the static electricity deflecting devices of the column 100 aregrounded and the semiconductor wafer W is also grounded. Thus, nopotential occurs between the semiconductor wafer W and each of thestatic electricity deflecting devices. As a result, no electric chargesare stored on the semiconductor wafer W. Instead, the static electricitydeflecting devices may be designed such that the potential of each ofthe first conductive films 602 becomes the same as that of thesemiconductor wafer W. In this case, no potential occurs between thesemiconductor wafer W and each of the static electricity deflectingdevices. As a result, no electric charges are stored on thesemiconductor wafer W.

As the material of the cylindrical member 612, a non-conductive materialfor example alumina, ceramic, or conductive ceramic whose volumeresistivity is 10⁷ to 10¹⁰ ohm·cm can be used. When a non-conductivematerial whose volume resistivity is 10⁷ to 10¹⁰ ohm·cm is used as thematerial of the cylindrical member 612, even if the cylindrical member612 is charged with static electricity, the cylindrical member 612 iseasily discharged. In addition, the cylindrical member 612 insulates thedeflecting electrodes from the ground (GND). In this embodiment, as thecylindrical member 612, conductive ceramic is used. Instead, insulativeceramic may be used. When insulative ceramic is used, its volumeresistivity may be 10^(∞)ohm·cm. Instead, the cylindrical member 612 maybe composed such that the specific resistance of ceramic of the middlelayer 604 is higher than that of the outer layer 601 and/or the innerlayer 606, for example the specific resistance of ceramic of the middlelayer 604 is on the order of 10⁷ ohm·cm or higher and the specificresistance of ceramic of the outer layer 601 and/or the inner layer 606is on the order of 10⁷ ohm·cm or lower. Instead, the cylindrical member612 may be composed such that the specific resistance of ceramic of themiddle layer 604 is higher than that of the outer layer 601 and/or theinner layer 606 and the specific resistance of the outer layer 601 islower or higher than that of the inner layer 606.

In addition, as was described above, it is preferred to use a materialthat satisfies the conditions of which the CR value (C representscapacitance, whereas R represents resistance) of the scanning frequencyof the electron beam is equal to or smaller than 100 μm, the capacitanceC is equal to or smaller than 100 pF, and the resistance R is 10⁶ to 10⁷ohms. The deflecting electrode 603 is composed of a platinum group metalsuch as ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os),iridium (Ir), or platinum or a conductive oxide such as ruthenium oxide,iridium oxide, or platinum oxide.

When the interior of the exposure processing chamber 4 is cleaned, astrong oxidizing agent is used. Thus, it is preferred that thedeflecting electrodes 603 be composed of a material that is not easilyoxidized. The first conductive films 602, the connection conductivefilms 703, and the second conductive films 610 may be composed of thesame material as the deflecting electrodes 603 or different materialstherefrom. Like the material of the deflecting electrodes 603, thematerial of the first conductive films 602, the connection conductivefilms 703, and the second conductive films 610 may be a platinum groupmetal such as ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os),iridium (Ir), or platinum or a conductive oxide such as ruthenium oxide,iridium oxide, or platinum oxide. As the first conductive films 602, thedeflecting electrodes 603, the connection conductive films 703, and thesecond conductive films 610, gold-plated metal films may be used. Inthis embodiment, the deflecting electrodes 603, the first conductivefilms 602, the connection conductive films 703, and the secondconductive films 610 are made of the same material, gold. As aconductive oxide, a conductive metal oxide such as vanadium dioxide(VO₂), chromium dioxide (CrO₂), molybdenum dioxide (MoO₂), tungstendioxide (WO₂), rhenium dioxide (ReO₂), niobium dioxide (NbO₂), rutheniumdioxide (RuO₂), rhodium dioxide (RhO₂), iridium dioxide (IrO₂),palladium dioxide (PdO₂), platinum dioxide (PtO₂), or osmium dioxide(OsO₂) or a conductive complex oxide such as lanthanum nickel complexoxide (LaNiO₃), strontium vanadic acid (SrVO₃), calcium vanadic acid(SrVO₃), calcium vanadic acid (CaVO₃), strontium ferrate (SrFeO₃),lanthanum titanic acid (LaTiO₃), lanthanum strontium nickel complexoxide (LaSrNiO₄), strontium chromate (SrCrO₃), calcium chromate(CaCrO₃), calcium ruthenate (CaRuO₃), strontium ruthenate (SrRuO₃), orstrontium iridate (SrIrO₃). It is preferred that these conductive filmsbe formed by electrolytic plating method or spattering method.

In FIG. 19, width a of the gap portions 611 is a predetermined width,for example a predetermined value of 1 mm or less, for example around0.5 mm. Length b of the connection portion 607 is a predeterminedlength, for example a predetermined value of 50 mm or less, for examplearound 1.5 mm to 25 mm. In this embodiment, the gap portion 611 and theconnection portion 607 are designed to satisfy the relationship of whichwidth a and length b are 1:10. When the diameter of the electron beampassing portion 609 and the diameter of the cylindrical member 612 arethe same, electrons can be prevented from entering into the spaceportion 608 as length b increases. As a result, an electron beam thatpasses through the electron passing portion can be prevented from beingaffected by static electricity charged up in the space portion 608.

However, length b is reversely proportional to diameter d of the spaceportion 608. Thus, to secure a sufficient electron capturing area anddecrease the area in which ceramic is exposed in the space portion 608as much as possible, it is preferred that the ratio of width a andlength b be a predetermined value, for example 1:1 or larger, forexample 1:3 to 1:10.

In addition, in this embodiment, since the second connection portion 607b is wider than the first connection portion 607 a, the area in whichceramic is exposed in the space portion 608 can be decreased incomparison with the case that the width of the connection portion 607 isthe same as the width of the first connection portion 607 a, namely thegap portion 611.

In this embodiment, the thickness of the first conductive film 602 is apredetermined thickness, for example a predetermined thickness of 0.5 μmto 5 μm, for example around 2 to 3 μm. Diameter d of the space portion608 is a predetermined diameter, for example a predetermined diameter of10 mm or less, for example around 2 to 3 mm. The thickness of the outerlayer 601 is a predetermined thickness, for example a predeterminedthickness of 10 mm or less, for example around 1 to 5 mm. The thicknessof the middle layer is a predetermined thickness, for example apredetermined thickness of 5 mm or less, for example around 0.5 to 1 mm.The thickness of the inner layer 606 is a predetermined thickness, forexample a predetermined thickness of 10 mm or less, for example around1.5 to 5 mm. The thickness of the deflecting electrode 603 is apredetermined thickness, for example a predetermined thickness of 10 μmor less, for example around 2 to 3 μm. The diameter of the electron beampassing portion 609 is a predetermined diameter, for example apredetermined diameter of 20 mm or less, for example around 4 to 11 mm.These values may be changed depending on the type of the staticelectricity deflecting device. In this embodiment, the relationship ofthe thickness of the outer layer 601, the thickness of the middle layer604, and the thickness of the inner layer 606 satisfies the condition ofthe thickness of the inner layer 606≧the thickness of the outer layer601>the thickness of the middle layer 604. Instead, the relationship ofthe thickness of the outer layer 601≧the thickness of the inner layer606>the thickness of the middle layer 604 may be satisfied.

In the column 100 of this embodiment, all the static electricitydeflecting devices have the space portions 608. Instead, at least staticelectricity deflecting devices that are disposed in the vicinity of thesemiconductor wafer W and whose charge-up largely and adversely affectsexposure accuracy, for example CP static electricity deflecting devicesin this embodiment, necessitate the space portions 608.

The static electricity deflecting devices are not limited to those ofthe foregoing embodiment. Instead, they may be modified and/or changedwithout departing from the spirit and scope of the present invention.FIG. 20 is a plan view showing a static electricity deflecting device1521 according to a modification of the foregoing embodiment. Forsimplicity, in FIG. 20, similar portions to those of the foregoingembodiment are denoted by similar reference numerals. In the embodiment,the second conductive film 610 is formed on the wall surface of each ofthe connection portions 607. In contrast, in this modification, aconductive film may not be formed on the wall surface of the connectionportion 607 such that ceramic of the inner layer 606 is exposed.

FIG. 21 is a plan view showing a static electricity deflecting device2521 according to another modification of the foregoing embodiment.Likewise, for simplicity, in FIG. 21, similar portions to those of theforegoing embodiment are denoted by similar reference numerals. In theforegoing embodiment, the shape, width, of the connection portion 607partially varies. In this modification, as shown in FIG. 21, the shape,width, of a connection portion 707 that connects the space portion 608and the electron beam passing portion 609 may be formed constant. Thus,since the width of the connection portion 707 is narrow, it preventselectrons from entering into the space portion 608. In addition, theratio of width a and length b substantially becomes large.

FIG. 22 is a plan view showing a static electricity deflecting device3521 according to another modification of the foregoing embodiment. Forsimplicity, in FIG. 22, similar portions to those of the foregoingembodiment are denoted by similar reference numerals. In the foregoingembodiment, the first conductive films 602 are electrically connected bythe connection conductive film 703. Instead, in this modification, asshown in FIG. 22, each of the first conductive films 602 may be groundedwithout the connection conductive film 703. Ammeters may be disposed ingrounding paths of the first conductive films 602 to detect the amountsof charge-up of the deflecting electrodes. Corresponding to the detectedresults, voltages applied to the deflecting electrodes may be controlledby a control mechanism. The outer layer 601 and the inner layer 606 ofthe upper surface and the lower surface of the cylindrical member 612may be gold-plated. The plated conductive film may be grounded.

Next, with reference to FIG. 23 and FIG. 24, the structures of the GL511, the CL 512, the PL 513, and the RL 514 will be described. Theirstructures are basically the same.

FIG. 23 is a perspective view showing an outline of the lens 511 (512 to514). FIG. 24 is a sectional view showing an outline of the state ofwhich the lens 511 (512 to 514) is mounted in the column 100.

As shown in FIG. 24, the lens 511 (512 to 514) has a rail-shapedsection. The lens 511 (512 to 514) is supported and secured by a supportmember 801. The lens 511 (512 to 514) is made of titanium or the like.The support member 801 is made of ceramic or the like. A film made ofgold is formed between the lens 511 and the support member 801. As shownin FIG. 15, the GL 511, the CL 512, the PL 513, and the RL 514 aredesigned such that the thicknesses (widths) of the plurality of lensesdisposed from the electron gun 501 to the first forming aperture S1-AP553, for example the lenses 511 and 512, are nearly the same. In thisembodiment, in the direction from the electron gun 501 to thesemiconductor wafer W, or in the traveling direction of an electron beamfrom the electron gun 501, the thicknesses of the lenses increase. Thethickness (width) of the lens 513 disposed from the first formingaperture S1-AP 553 to the second forming aperture S2-AP 555 is smallerthan that of each of the lenses 511 and 512. The thickness (width) ofthe lens 514 disposed from the second forming aperture S2-AP 555 to thesemiconductor wafer W is smaller than the thickness (width) of the lens513. At least, the lenses that satisfy the foregoing conditions aredisposed in these areas. More preferably, the plurality of lensesdisposed from the electron gun 501 to the first forming aperture S1-AP553, for example the lens 511 and 512, are designed to satisfy thecondition of the thickness (width) of the lens 511>the thickness (width)of the lens 512≈the thickness (width) of the lens 513>the thickness(width) of the lens 514.

The lens 511 (512 to 514) is made of a conductive material, for examplea nonmagnetic and conductive material, for example tungsten carbide. Inaddition, DC voltages are independently applied to the lenses 511, 512,513, and 514. The voltages of the lenses 511 to 514 are set by thecontrol mechanism. The voltage applied to the lens 511 is apredetermined value of 4.0 to 5.0 kV. The voltage applied to the lens512 is a predetermined value of 2.0 to 4.0 kV. The voltage applied tothe lens 513 is a predetermined voltage of 2.5 to 3.5 kV. The voltageapplied to the lens 514 is a predetermined voltage of 3.5 to 4.0 kV. Itis preferred that the relationship of the voltage of the lens 511>thevoltage of the lens 514>the voltage of the lens 512 or the voltage ofthe lens 513 be satisfied. Since the lens 513 projects the first formingaperture S1-AP 553 to the second forming aperture S2-AP 555, it ispreferred that the voltage applied to the lens 513 be a predeterminedvalue of 2.8 to 3.2 kV. The inner diameters of the lenses 511 to 514satisfy the condition of the inner diameter of the lens 513≈the innerdiameter of the lens 512>the inner diameter of the lens 514. Members2010 disposed at an upper portion and a lower portion of the lens 511(512 to 514) are made of a conductive material, for example anonmagnetic and conductive material, for example tungsten carbide. Themembers 2010 are grounded. When only the lens 512 is provided with anextension portion 2011 only on the member 2010 side, namely the electrongun side, the inner diameter of the member 2010 is smaller than theinner diameter of the lens 512, whereas the inner diameter of the member2010 on the semiconductor wafer W side is nearly the same as the innerdiameter of the lens 512. It is preferred that the inner diameter of themember 2010 be nearly the same as the inner diameter of each of theother lenses 511, 513, and 514.

As shown in FIG. 47, a lens 511 according to another embodiment may becomposed of a ring member 511 whose inner diameter increases in thetraveling direction of the electron beam. In this case, the innerdiameter of the grounding member 2010 on the semiconductor wafer W sideis nearly the same as the inner diameter of the bottom position of thering member 511. The grounding member 2010 is not disposed on theelectron gun side such that the distance between the source of theelectron beam and the ring member 511 becomes as short as possible. Inthis structure, the efficiency of which the electron beam passes isimproved. As shown in FIG. 48, a lens 511 according to anotherembodiment may be composed of a plurality of ring members 2012 whoseinner diameters increase in the traveling direction of the electronbeam. The lens 511 may be adequately structured in a combination of thedisclosed technologies.

With respect to a structure of suppressing the penetration of magnetismin the exposure processing chamber 4 that emits an electron beam to asemiconductor wafer W and performs the exposure process for asemiconductor wafer W, as shown in FIG. 25, the exposure processingchamber 4, the reduced pressure conveying chamber 70, and the vacuumpreparation chamber 60 are surrounded by a magnetism penetrationsuppressing mechanism, for example a magnetic shield member 121 such asa member made of a material such as permalloy, magnetic soft iron,magnetic steel iron, Sendust, or ferrite. In the exposure processingchamber 4, the reduced pressure conveying chamber 70, and the vacuumpreparation chamber 60, an electron beam is affected by an externalmagnetism, for example it is deflected. Thus, the yield of semiconductorwafers W in the exposure process are affected. Although the wholeapparatus may be surrounded by the magnetic shield member 121, in thiscase, the size of the apparatus will increase. Thus, this approach wouldbe neither practical, nor economical. In addition, since the apparatushas magnetism generation sources such as a control device and so forth,it is preferred that the exposure processing chamber 4, the reducedpressure conveying chamber 70, and the vacuum preparation chamber 60 becovered by the magnetic shield member 121. Instead, only the exposureprocessing chamber 4 may be covered by the magnetic shield member 121.In this case, magnetism generated by the reduced pressure conveyingchamber 70 and the vacuum preparation chamber 60 may not be sufficientlyprotected. Thus, it is necessary to cover at least the exposureprocessing chamber 4 and the reduced pressure conveying chamber 70 bythe magnetic shield member 121. It is preferred that the exposureprocessing chamber 4, the reduced pressure conveying chamber 70, and thevacuum preparation chamber 60 be covered by the magnetic shield member121.

Thus, an area 120 that is more than half of the floor area of theapparatus is covered by the magnetic shield member 121. In addition, itis preferred that the magnetic shield member 121 have a thickness andstructure that allows the intensity of magnetic field inside themagnetic shield member 121 is half or less of the intensity of magneticfield outside the magnetic shield member 121 or the apparatus.

In addition, as shown in FIG. 26, as an example of magnetism generationsources, there is a power supply section as an energy source thatgenerates an electron beam, for example an amplifier section 130. Theamplifier section 130 is disposed opposite to the reduced pressureconveying chamber 70 of the exposure processing chamber 4. The height ofthe bottom position of the amplifier section 130 is greater than theheight h5 of the holding surface of the semiconductor wafer W on thestage 91. Preferably, the height of the bottom position of the amplifiersection 130 is greater than the height h6 of the loading openings 89from which the semiconductor wafer W is loaded into the exposureprocessing chamber 4. More preferably, the height of the bottom positionof the amplifier section 130 is greater than the height of radiationposition h7 of an electron beam emitted from the column 100. Thisarrangement prevents an electron beam used for the exposure process frombeing adversely affected by electromagnetic waves emitted from theamplifier section 130.

A maintenance space section 131 is disposed below the amplifier section130. The maintenance space section 131 allows a worker to maintain theexposure processing chamber 4 and so forth. Thus, not only influence ofelectromagnetic waves, but efficiency of a maintenance work isconsidered. Since the space of the apparatus is effectively used, thesize of the apparatus is downsized and the foot print thereof isdecreased.

As shown in FIG. 27, a gas supplying mechanism 140 is disposed oppositeto the atmospheric aligner section 3 of the exposure processing section5. The gas supplying mechanism 140 supplies a gas, for example clean airto the whole apparatus. At least the temperature and humidity of theclean air are controlled. The gas supplying mechanism 140 also suppliesclean air 141 to the FFU 40 through a gas flow path 142 disposed abovethe exposure processing section 5. In addition, the gas supplyingmechanism 140 supplies the clean air 141 to the exposure processingsection 5 through the gas flow path 142 at a predetermined flow rate sothat a down-flow DF takes place in the exposure processing section 5.The clean air 141 is collected at lower positions of the exposureprocessing section 5 and the atmospheric aligner section 3. Thecollected clean air 141 is supplied to the gas supplying mechanism 140through a gas collection path 143. As a result, a recycling system iseffectively achieved.

As shown in FIG. 28, the gas flow path 142 is divided into a pluralityof zones Z1, Z2, and Z3. In addition, a plurality of air flow paths 150are disposed on both wall sides of the exposure processing section 5.Each of the air flow paths 150 has a plurality of vertical zones Z11,Z12, Z13, Z14, and Z15. The zone Z2 of the gas flow path 142 has an airsupplying opening 152 that is a flow path through which clean airsupplied from the gas supplying mechanism 140 and taken from an airtaking opening 151 is supplied to the exposure processing section 5 andthe FFU 40.

The zone Z1 and the zone Z3 of the gas flow path 142 have an air supplyopening 153 through which clean air is supplied from the gas supplyingmechanism 140 to a flow path of at least one zone, for example the zoneZ11 of the gas flow path 150. The supplied clean air is taken from a gastaking opening 154 disposed above a flow path of the zone Z11. The takenclean air forms a down-flow DF that flows downward as shown in FIG. 28.The down-flow DF is guided to flow paths of the zones Z12, Z13, Z14, andZ15 from a lower position of the flow path of the zone Z11. The guidedclean air forms up-flows UPF in the plurality of zones Z12, Z13, Z14,and Z15 as shown in FIG. 28. All the up-flows UPF in the flow paths ofthe plurality of zones Z12, Z13, Z14, and Z15 are collected to the gasflow path 142 through gas collection openings 155. The collected air issupplied to the gas supplying mechanism 140 through a gas collectionopening 156. As a result, a recycling system is effectively achieved.

Thus, a partition plate 157 as a gas separation member is disposed inthe flow paths of the zones Z1 and Z3 so that a gas supply path of cleanair to the zone Z11 and a gas collection path of clean air from thezones Z12, Z13, Z14, and Z15 are formed. Disposed in the follow path ofthe zone Z11 in which a down-flow is formed is a heat source, forexample a control mechanism 166 of the exposure processing section 5.Disposed in the zone Z15 in which an up-flow UPF is formed is anoperation mechanism of the control mechanism 166, for example anoperation panel 160, whose heat generation is smaller than the controlmechanism 166.

The magnetic shield prevents magnetism from entering into the inside ofthe apparatus. In addition, heat management is performed outside themagnetic shield. Thus, the whole system can be prevented from beingenvironmentally affected. In addition, the system prevents itself fromaffecting the environment of the outside. Alternatively, a heat sourcemay be provided to at least one of the up-flow UPF zones Z12, Z13, Z14,and Z15 and heat caused by the heat source may be actively collected,heat can be prevented from staying in the apparatus. As a result, theinfluence of heat against the processing chamber may be suppressed.Thus, the yield of semiconductor wafers W may be preferably improved.

With respect to the relationship of inner pressures of individualsections of the apparatus, as shown in FIG. 29, when the inner pressureof the resist processing device 2 is denoted by P1, the inner pressureof the atmospheric aligner section 3 is denoted by P2, the innerpressure of the heat processing section 22 is denoted by P3 (when heatprocessing section 22 has an opening and closing mechanism, it is open),the pressure in the space of the heat processing section 22 is denotedby P4 (clean air may be supplied from the gas supplying mechanism 140 ora down-flow may be formed by clean air supplied from the FFU 40), theinner pressure of the vacuum preparation chamber 60 is denoted by P5(when an opening and closing mechanism 61 is open), the inner pressureof the exposure processing section 5 is denoted by P6, the innerpressure of the zones Z11, Z12, Z13, Z14, and Z15 is denoted by P7, andthe inner pressure of the clean room in which the apparatus is disposedis denoted by P8, the conditions of P6>P2, P1>P2, P5>P2, P2>P4, P2>P3,and P6≧P7 are kept.

The conditions of P6>P2, P1>P2, and P5>P2 are kept because clean air isprevented from flowing from the atmospheric aligner section 3 to theprocessing chambers of the resist processing device 2 and the exposureprocessing section 5. As a result, the problem of cross contamination ofthe apparatus can be solved.

In addition, when the inner pressure P8 of the clean room is comparedwith the conditions of P6>P2, P1>P2, and P5>P2, the condition of P2>P8is kept. Thus, air in the clean room is prevented from adverselyaffecting the process environment. Next, the relationship of P2>P4 andP2>3 will be described. As was described above, vented gas from the heatprocessing section 22 flows from the temperature adjustment mechanismside to the heat process mechanism side. These conditions prevent heatfrom affecting the conveying mechanism side. In addition, theseconditions prevent particles that take place from a semiconductor waferW for the heat process of the heat process mechanism from leaking intothe conveying mechanism side. In addition, since there are heatgeneration sources such as a power supply section, a thermal processcontrol mechanism, and so forth above the heat processing section, theseconditions prevent heat from leaking into the conveying mechanism side.Of course, when the inner pressures of the resist processing device 2,and the exposure processing chamber 4, the atmospheric aligner section3, and the atmospheric aligner section 3 are compared with the innerpressure of the clean room, the conditions of (P2, P4, P3)>P8 are kept.With respect to the relationship of P4 and P3, it is preferred that thecondition of P3≧P4 is kept to prevent heat from affecting the heatprocessing section 22.

In addition, the condition of P6≧P7 is kept. This is because a down-flowis formed in the exposure processing section 5. However, since theprocessing chamber and so forth are disposed in the exposure processingsection 5, a part of the down-flow bents horizontally. Although gas iscollected downwardly, since gas is prevented from being agitated in theapparatus, it is preferred that the inner pressure of the zone Z15, P7,be lower than the inner pressure of the exposure processing section 5,P6, and that gas be collected on the side wall side even if gas leaks.In other words, even if a worker forgot to mount a panel in place duringa maintenance work and a gap occurred, gas could be collected on theside wall side. When the inner pressure P6 of the exposure processingsection 5 and the inner pressure P7 of the zones 11 to 15 are comparedwith the inner pressure P8 of the clean room the conditions of (P6,P7)>P8 are kept. Thus, air in the clean room can be prevent fromadversely affecting the process environment.

With respect to the relationship of P5, P2, and P1, the conditions ofP5≧P1>P2 are kept. These conditions prevent particles from entering intothe vacuum preparation chamber 60. When the inner pressure of theatmospheric aligner section 3 is compared with the inner pressure P8 ofthe clean room, the condition of P2>P8 is kept.

With respect to the relationship of the inner pressure of the vacuumpreparation chamber 60 (when the opening and closing mechanism 67 isopen) and the inner pressure of the reduced pressure conveying chamber70 (when the opening and closing mechanism 67 is open), the condition ofwhich the inner pressure of the vacuum preparation chamber 60 be equalto or greater than the inner pressure of the reduced pressure conveyingchamber 70 is kept. Preferably, the condition of which the innerpressure of the vacuum preparation chamber 60 be greater than the innerpressure of the reduced pressure conveying chamber 70 is kept. Withrespect to the relationship of the inner pressure of the reducedpressure conveying chamber 70 (when an opening and closing mechanism 92is open) and the inner pressure of the exposure processing chamber 4(when the opening and closing mechanism 92 is open), the condition ofwhich the inner pressure of the exposure processing chamber 4 be equalto or greater than the inner pressure of the reduced pressure conveyingchamber 70 is kept. Preferably, the condition of which the innerpressure of the exposure processing chamber 4 be greater than the innerpressure of the reduced pressure conveying chamber 70 is kept. Thiscondition allows particles that take place in the vacuum preparationchamber 60 to be collected by the reduced pressure conveying chamber 70and prevents particles from entering into the exposure processingchamber 4.

Thus, in this condition, the yield of substrates under processing isimproved. With respect to the relationship of the inner pressure of thereduced pressure conveying chamber 70 and the inner pressure of thevacuum preparation chamber 60, preferably, the conditions of which theinner pressure of the vacuum preparation chamber 60 is greater than theinner pressure of the exposure processing chamber 4, the inner pressureof the exposure processing chamber 4 is greater than the inner pressureof the reduced pressure conveying chamber 70 are kept.

With respect to inner temperatures, the condition of which the innertemperature of the resist processing device 2 is equal to or greaterthan the inner temperature of the atmospheric aligner section 3 is kept.Preferably, the condition of which the inner temperature of the resistprocessing device 2 is greater than the inner temperature of theatmospheric aligner section 3 is kept. As described above, thedifference between the inner temperature of the atmospheric alignersection 3 and the inner temperature of the resist processing device 2 issmall, for example from a fraction of 1° C. to 3° C., preferably, from0.1 to 0.5° C. This condition prevents the resist film formed on asemiconductor wafer W from expanding and shrinking and thereby theaccuracy of the exposure process from deteriorating. When asemiconductor wafer W is conveyed to the load lock (vacuum preparationchamber 60) with the temperature adjustment plate 27 whose temperatureis slightly higher than the temperature of the upper portion of thestage 91, the decrease of the temperature of the semiconductor wafer Wdue to the vacuum venting of the load lock (vacuum preparation chamber60) can be offset. In addition, the conditions of which the innertemperature of the atmospheric aligner section 3 is equal to the innertemperature of the exposure processing section 5 and the innertemperature of the exposure processing section 5 is equal to the innertemperature of the zones Z11, Z12, Z13, Z14, and Z15 are kept. In thisdescription, the phrase “equal to” means “nearly” that implies an errorwithin 3° C.

With respect to the relationship of inner humidities, the conditions ofwhich the inner humidity of the atmospheric aligner section 3 is equalto the inner humidity of the exposure processing section 5, the innerhumidity of the exposure processing section 5 is equal to the innerhumidity of the zones Z11, Z12, Z13, Z14, and Z15, and the innerhumidity of the zones Z11, Z12, Z13, Z14, and Z15 is equal to the innerhumidity of the vacuum preparation chamber 60 (when the opening andclosing mechanism 61 is open) are kept. In addition, the condition ofwhich the inner humidity of the atmospheric aligner section 3 is equalto or greater than the inner humidity of the vacuum preparation chamber60 (when the opening and closing mechanism 61 is open) is kept.Preferably, the condition of which the inner humidity of the atmosphericaligner section 3 is greater than the inner humidity of the vacuumpreparation chamber 60 (when the opening and closing mechanism 61 isopen) is kept. Thus, of course, the condition of which the innerhumidity of the resist processing device 2 is greater than the innerhumidity of the vacuum preparation chamber 60 (when the opening andclosing mechanism 61 is open) is kept. This is because atmosphericpressure and reduced pressure take place in the vacuum preparationchamber 60. Thus, if moisture entered into the vacuum preparationchamber 60, the throughput of the pressure reduction would decrease.Thus, it is necessary to cause an inert gas, for example N₂, to flowfrom the vacuum preparation chamber 60 to the atmospheric alignersection 3.

With respect to control signals and a control structure, as shown inFIG. 30, as described above, the control mechanism 166 is disposed inthe exposure processing section 5. In addition, an operation mechanism160 is disposed. The operation mechanism 160 has a display mechanism.The control mechanism 166 controls individual devices of the exposureprocessing section 5. The control mechanism 166 sends and receivessignals to a management host computer (block L in FIG. 30) of the plantin which the apparatus is disposed. The atmospheric aligner section 3has a control mechanism 180 that controls individual devices of theatmospheric aligner section 3. An operation mechanism 181 is connectedto the control mechanism 180. The operation mechanism 181 has a displaymechanism. The operation mechanism 181 may be shared by the operationmechanism 160. When necessary, if the atmospheric aligner section 3 ismanufactured and sold as one independent unit or maintained, theoperation mechanism 181 may be able to be freely connected to theatmospheric aligner section 3.

The control mechanism 180 sends and receives signals to and from thecontrol mechanism 53 that controls the heat processing section asdescribed above. In addition, the control mechanism 180 sends andreceives signals to and from a control mechanism 183 that controls theconveying mechanism 20 (block M in FIG. 30). In addition, the controlmechanism 180 sends and receives signals to and from a control mechanism184 on the resist processing device 2 side through a signal line 185.The control mechanism 184 is connected to an operation panel 14. Theoperation panel 14 has a display mechanism. Signals that are sent andreceived to and from the resist processing device 2 are signals thatcause a semiconductor wafer W to be transferred between the conveyingmechanism 20 and the passing portion 10 and the receiving portion 11 ofthe resist processing device 2 and signals about atmospheric pressuresin the resist processing device 2.

By sending a signal about the inner atmospheric pressure of theatmospheric aligner section 3 to the control mechanism 184 of the resistprocessing device 2 through the control mechanism 180, the atmosphericpressure may be checked mutually on the resist processing device 2 sideand the atmospheric aligner section 3 side. The control mechanism 166may control the atmospheric pressure of the whole apparatus based on theinformation. In the foregoing example, the control mechanism 180 and thecontrol mechanism 184 were described. Instead, the control mechanism 166may receive a signal from the control mechanism 184 through a signalline 186. The control mechanism 166 may send a control command to thecontrol mechanism 180.

The control mechanism 166 and the control mechanism 180 send and receivesignals through a signal line 187. Since the control mechanism 166manages the whole apparatus, the control mechanism 166 can freelyreceive signals about the states of individual functions of theatmospheric aligner section 3 from the control mechanism 180. One ofimportant signals that the control mechanism 166 sends to the controlmechanism 180 is a signal that causes the control mechanism 180 tocontrol the control mechanism 53 to start the heat process based on thestart time or the end time of the exposure process for a semiconductorwafer W in the exposure processing chamber 4.

Since the state of a resist film formed on a semiconductor wafer Wdeteriorates with time, it is one of factors that cause the yield ofsemiconductor wafers W to decrease. Thus, the time management fromexposure process to PEB heat process is important. Since the controlmechanism 166 manages the whole exposure device, the yield ofsemiconductor wafers W is prevented from decreasing.

Since the state of a resist film formed on a semiconductor wafer Wdeteriorates with time, the control mechanism 184 on the resistprocessing device 2 side informs the control mechanism 180 of the endtime of resist coating. In addition, the control mechanism 184 informsthe control mechanism 166 of time information such as conveying time inthe atmospheric aligner section 3. The control mechanism 166 causes theexposure processing chamber 4 to perform the exposure process for asemiconductor wafer W based on conveying times of a semiconductor waferW and/or change factors of the state of a resist film formed on asemiconductor wafer W in the reduced pressure conveying chamber 70, thevacuum preparation chamber 60, and the exposure processing chamber 4.The control mechanism 180 manages times such as the start time for PEBheat process for a semiconductor wafer W that has been exposed based onchange factors of the state of the resist film and the informationreceived from the control mechanism 166.

After the PEB heat process has been completed, the control mechanism 180sends information about transfer time for the resist processing device 2and so forth to the control mechanism 184. The control mechanism 184manages times for a semiconductor wafer W, for example the start time ofthe development process for a resist film formed on a semiconductorwafer W. Thus, a plurality of substrates can be prevented from becomingdifferent in their processes. As a result, the yield of semiconductorwafers W can be improved. In the foregoing description, the controlmechanism 180 was provided. Instead, of course, the control mechanism166 may contain at least a part of the functions of the controlmechanism 180. Their information is stored in a storage mechanism, forexample a nonvolatile memory or a CD-R, of each control mechanism andcan be freely displayed on a display mechanism of each operationmechanism.

The control mechanism 166 or the control mechanism 180 can send timeinformation such as the end time of the PEB heat process in theatmospheric aligner section 3 and/or atmospheric information about theatmospheric aligner section 3 to the control mechanism 184. The controlmechanism 184 can manage the development start time. As a result, theyield of semiconductor wafers W can be improved. In addition, thecontrol mechanism 166 or the control mechanism 180 receives informationabout the time at which the resist solution was coated on asemiconductor wafer W, information about the time at which the heatprocess was performed after coating of the resist solution, informationabout the heat process and manages the start time for the exposureprocess.

Connected to the control mechanism 166 are a pressure detectionmechanism, for example a pressure sensor 190, that detects the pressureof a predetermined portion of the exposure processing chamber 5, apressure detection mechanism, for example a pressure sensor group 191,that detects pressures of predetermined portions of the zones Z11, Z12,Z13, Z14, and Z15, and a pressure detection mechanism, for example apressure sensor 192, that detects the pressure of a predeterminedportion of the vacuum preparation chamber 60.

Connected to the control mechanism 180 are a pressure detectionmechanism, for example a pressure detection sensor 193, that detects thepressure of a predetermined portion of the atmospheric aligner section3, and a chemical detection mechanism 194 that detects a chemicalcomponent, for example ammonia or the like, of a predetermined portionof the atmospheric aligner section 3. Connected to the control mechanism184 are a pressure detection mechanism, for example a pressure sensor195 that detects the pressure of a predetermined section of the resistprocessing device 2, and a chemical detection mechanism 196 that detectsa chemical component, for example ammonium, of a predetermined sectionof the resist processing device 2.

Connected to the control mechanism 166 and/or the control mechanism 184is a pressure detection mechanism, for example a pressure sensor 197,that detects the pressure outside the apparatus, for example the innerpressure of the clean room in which the apparatus is disposed. In such amanner, the pressure and so forth of the individual sections can bemonitored. Since a chemical component that is present in the processsection of the resist processing device 2 is one of factors thatadversely affect the process of a semiconductor wafer W, the chemicaldetection mechanisms in the resist processing device 2 and theatmospheric aligner section 3 monitor a chemical component that ispresent therein. Thus, a chemical component needs to be monitored notonly in the resist processing device 2, but in the atmospheric alignersection 3.

The substrate processing apparatus according to this embodiment isstructured as described above. Next, operations for processes of asemiconductor wafer W will be described.

First, the coating device (coater COT) of the resist processing device 2coats resist solution on the process surface of a semiconductor wafer W.Thereafter, a heating process is performed for the semiconductor wafer Wat a predetermined temperature. Thereafter, the temperature of thesemiconductor wafer W is adjusted to nearly the same temperature as theinner temperature of the resist processing device 2. Thereafter, thesemiconductor wafer W is conveyed to the alignment mechanism 15. Thealignment mechanism 15 aligns the semiconductor wafer W (this operationis referred to as the first alignment of the resist processing device2). Thereafter, the semiconductor wafer W is conveyed to the passingportion 10 by the conveying mechanism 12. The passing portion 10 alignsthe semiconductor wafer W by physically placing the semiconductor waferW in a predetermined position (this operation is referred to as thesecond alignment of the resist processing device 2). After the controlmechanism 184 has checked the presence or absence of a semiconductorwafer W at the passing portion 10 with a sensor, the control mechanism184 sends a “conveyance ready completion” signal to the controlmechanism 166 and/or the control mechanism 180.

When the control mechanism 166 and/or the control mechanism 180 hasreceived the “conveyance ready completion” signal, the semiconductorwafer W is received from the passing portion 10 by the conveyingmechanism 20. Thereafter, the control mechanism 166 and/or the controlmechanism 180 checks the presence or absence of the semiconductor waferW with a sensor of the conveying mechanism 20 and then sends a“conveyance completion” signal to the control mechanism 184. During thisoperation, the semiconductor wafer W is conveyed to the alignmentmechanism 21 by the conveying mechanism 20. The alignment mechanism 21aligns the semiconductor wafer W (this operation is referred to as thealignment of the atmospheric aligner section 3). During the conveyingoperation, the temperature of the semiconductor wafer W is adjusted tonearly the same temperature as the inner temperature of the resistprocessing device 2 or to a lower temperature than the inner temperatureof the resist processing device 2 with the inner temperature of theatmospheric aligner section 3.

Thereafter, the semiconductor wafer W is conveyed to the vacuumpreparation chamber 60, which is a substrate loading and unloadingsection of the exposure processing section 5, by the conveying mechanism20. The vacuum preparation chamber 60 is vented so that a positivepressure higher than the inner atmospheric pressure of the atmosphericaligner section 3 becomes a predetermined reduced pressure (this reducedpressure is the same as the pressure at which the semiconductor wafer Wis transferred to the reduced pressure conveying chamber 70, which willbe described later. When the inner pressure of the vacuum preparationchamber 60 is slightly lower than the inner pressure of the reducedpressure conveying chamber 70, particles can be prevented from enteringinto the reduced pressure conveying chamber 70). After the vacuumpreparation chamber 60 has been vented or while it is being vented, thestate of the semiconductor wafer W is detected by a plurality of CCDcameras 65 (position detection step). Thereafter, the opening andclosing mechanism 67 is opened. Thereafter, the semiconductor wafer W isconveyed from the vacuum preparation chamber 60 to the reduced pressureconveying chamber 70 by the conveying mechanism 72 of the reducedpressure conveying chamber 70. Thereafter, the opening and closingmechanism 67 is closed.

Thereafter, the vacuum pump 83 is driven so that the inner pressure ofthe reduced pressure conveying chamber 70 is nearly the same as theinner pressure of an exposure processing section 90 (the inner pressureof the reduced pressure conveying chamber 70 may be slightly lower thanthe inner pressure of the exposure processing section 90 so as toprevent particles from entering into the exposure processing section90). Thereafter, the opening and closing mechanism 92 is opened. Theconveying mechanism 72 adjusts the angle of approach of thesemiconductor wafer W to the exposure processing section 90corresponding to position data detected by the CCD cameras 65. Before orafter the semiconductor wafer W is conveyed, the stage 91 of theexposure processing section 90 is moved to an expected transfer positionat which the semiconductor wafer W is transferred to the conveyingmechanism 72 (this operation is referred to as the first alignment ofthe exposure processing section 5).

The semiconductor wafer W is placed on a support mechanism disposed inthe stage 91. The support mechanism supports the rear surface of thesemiconductor wafer W. The support mechanism receives the semiconductorwafer W from the conveying mechanism 72 by raising a plurality ofsupport pins. The support mechanism places the semiconductor wafer W onan insulation portion 299 of the static electricity chuck mechanism 110by lowering the support pins. While or after the semiconductor wafer Wis placed on the insulation portion 299, the conveying mechanism 72retreats from the exposure processing section 90. Thereafter, theopening and closing mechanism 92 is closed.

Next, the semiconductor wafer W is placed on the insulation portion 299of the static electricity chuck mechanism 110. Thereafter, theconductive needle 305 is moved and contacted to the predetermined filmon the process surface of the semiconductor wafer W by the raising andlowering mechanism 306. Thereafter, the semiconductor wafer W iselectrostatically sucked by the static electricity chuck mechanism 110.Thereafter, the conductive needle 303 is moved and contacted to thepredetermined film on the rear surface of the semiconductor wafer W bythe raising and lowering mechanism 304 as a conveying mechanism.Thereafter, electric charges on the semiconductor wafer W are dischargedsuch that they becomes lower than a predetermined value.

Thereafter, the mark detection mechanism 105 of the exposure processingsection 90 detects an alignment mark on a semiconductor wafer W held bythe static electricity chuck mechanism 110 on the stage 91. The stage 91is moved on the X and Y axes corresponding to the detected data.Finally, the semiconductor wafer W is aligned (this operation isreferred to as the second alignment of the exposure processing section5). After this alignment, an exposure process is performed, namely anelectron beam is emitted from the column 100 to the resist film formedon the semiconductor wafer W at an acceleration voltage in the rangefrom 1 kV to 60 kV, preferably in the range from 1 kV to 10 kV, morepreferably 5 kV so that a predetermined pattern is formed on thesemiconductor wafer W. It is preferred that the acceleration voltage ofthe electron beam be set so that the electron beam acts on the resistfilm formed on the semiconductor wafer W. It is necessary to preventelectrons of the electron beam emitted to silicon (Si), which is thebase material of the semiconductor wafer W, from diffusing. In addition,while the semiconductor wafer W is being exposed, the first conductivefilm of the space portion of each of the static electricity deflectingdevices in the column 100 is grounded.

After the exposure process, the stage 91 is moved to the transferposition of the semiconductor wafer W to the conveying mechanism 72.First, the voltages applied to the first electrode 300 and the secondelectrode 301 are turned off. Thereafter, the switches SW2 and SW5 areturned on. The current value of the leak current that flows in theconductive needle 303 and/or the conductive needle 305 is measured. Whenthe current value is out of the predetermined allowable range, thepredetermined voltage is applied to the conductive needle 303 and/or theconductive needle 305 at least one time or the error process isperformed. When the determined result indicates that the current valueof the leak current is in the predetermined range, after it is checkedthat the conductive needle 305 and the conductive needle 303 are keptapart from the semiconductor wafer W, the semiconductor wafer W is keptapart from the static electricity chuck mechanism 110. Thereafter, thesemiconductor wafer W is unloaded from the exposure processing chamber 4by the conveying mechanism 72.

Thereafter, the semiconductor wafer W is loaded into the vacuumpreparation chamber 60 by the conveying mechanism 72. Next, thesemiconductor wafer W is unloaded from the vacuum preparation chamber 60by the conveying mechanism 20. The semiconductor wafer W is conveyed tothe temperature adjustment plate 27 of the heat processing section 22 bythe conveying mechanism 20. The semiconductor wafer W is held on thetemperature adjustment plate 27 or by the conveying mechanism 20 for apredetermined period of time (this period of time is constant for eachof the plurality of semiconductor wafers W) based on information thatthe control mechanism 166 has calculated corresponding to the end timeof the exposure process and a period of time for which the semiconductorwafer W has been placed in reduced pressure. Thereafter, thesemiconductor wafer W is placed on the heating plate 26. The heatingplate 26 performs a heat process for the semiconductor wafer W. Sincethe period of time for which the heat process is started needs to beconstant for each of the plurality of semiconductor wafers W, it isnecessary to manage the period of time for which the semiconductor waferW is conveyed from the temperature adjustment plate 27 to the heatingplate 26. When the semiconductor wafer W is held by the conveyingmechanism 20, it is necessary to manage the period of time for which thesemiconductor wafer W is conveyed from the conveying mechanism 20 to thetemperature adjustment plate 27 and the period of time for which thesemiconductor wafer W is conveyed from the temperature adjustment plate27 to the heating plate 26.

The semiconductor wafer W for which the heat process has been performedat the predetermined temperature is transferred to the temperatureadjustment plate 27. Thereafter, the semiconductor wafer W istransferred from the temperature adjustment plate 27 to the conveyingmechanism 20. Thereafter, the semiconductor wafer W is unloaded from theheat processing section 22 by the conveying mechanism 20. Thereafter,the semiconductor wafer W is temporarily aligned by the alignmentmechanism 21 and then conveyed to the receiving portion 11 of the resistprocessing device 2. Instead, the semiconductor wafer W may be directlyconveyed to the receiving portion 11 of the resist processing device 2.When the semiconductor wafer W is conveyed, the control mechanism 180and/or the control mechanism 166 needs to ask the control mechanism 184whether the receiving portion 11 has a semiconductor wafer W. Only whenthe control mechanism 180 and/or the control mechanism 166 has checkedthat the receiving portion 11 does not have a semiconductor wafer W, theconveying mechanism 20 conveys the semiconductor wafer W to thereceiving portion 11. Before or after the semiconductor wafer W isconveyed to the receiving portion 11, the control mechanism 180 and/orthe control mechanism 166 sends information about the semiconductorwafer W and information about the end time of the process of the heatingplate 26 to the control mechanism 184.

The control mechanism 184 manages time information about individualsections of the apparatus corresponding to information received from thecontrol mechanism 180 and/or the control mechanism 166 and conveys thesemiconductor wafer W to the developing device (developer (DEV)). Thedeveloping device performs a developing process for the semiconductorwafer W. Thereafter, a sequence of operations is completed.

Next, with reference to FIG. 31, a substrate processing apparatusaccording to another embodiment of the present invention will bedescribed. In FIG. 31, similar portions to those of the foregoingembodiment will be denoted by similar reference numerals and theirdescription will be described. As shown in FIG. 31, six surfaces, whichare an upper surface, a lower surface, a left surface, a right surface,a front surface, and a rear surface of each of an exposure processingchamber 4, a reduced pressure conveying chamber 70, and a vacuumpreparation chamber 60 are covered by a magnetism penetrationsuppressing mechanism (first magnetic shield), for example a magneticshield member 121 that non-magnetically shields a member made of forexample permalloy, magnetic soft iron, magnetic steel iron, Sendust, orferrite. As described above, the exposure processing chamber 4 iscovered by the magnetic shield member 121 because an electron beam isdeflected by magnetism. Thus, the magnetism shield member 121 preventsthe yield of the exposure process for a semiconductor wafer W fromlowering. Although the whole apparatus may be covered by the magnetismshield member 121, since the apparatus becomes large, such a method isneither practical, nor economical. In addition, since the apparatus hasa magnetic generation source such as a control device, it is preferredthat the exposure processing chamber 4, the reduced pressure conveyingchamber 70, and the vacuum preparation chamber 60 be covered by themagnetism shield member 121. Although only the exposure processingchamber 4 may be covered by the magnetism shield member 121, magnetismgenerated by the reduced pressure conveying chamber 70 and the vacuumpreparation chamber 60 cannot be effectively prevented. Thus, it isnecessary to cover at least the exposure processing chamber 4 and thereduced pressure conveying chamber 70 by the magnetism shield member121. It is preferred that the exposure processing chamber 4, the reducedpressure conveying chamber 70, and the vacuum preparation chamber 60 becovered by the magnetism shield member 121. In addition, to downsize thesystem, it is more preferred that only the exposure processing chamber 4be covered by the magnetism shield member 121.

Disposed inside the magnetic shield member 121 is a magnetismpenetration suppressing mechanism (second magnetic shield), for examplea magnetic shield member 500, that electromagnetically shields theinside. The magnetic shield member 1500 is for example Helmholtz coils.The Helmholtz coils are disposed on the six inner surfaces, which are anupper surface, a lower surface, a left surface, a right surface, a frontsurface, and a rear surface of the magnetism shield member 121. A powersupply 1501 is connected to each surface of the magnetic shield member1500 so that a current having a predetermined current value and apredetermined frequency flows in each surface. Disposed at apredetermined position of an inner area of the magnetic shield member1500 is a magnetic sensor 1502 that measures magnetism. Based on themeasured result of the magnetic sensor 1502, a control mechanism 1503controls the power supply 1501 for a current value, frequency, andcurrent direction for the current that flows in the magnetic shieldmember 1500 so as to control a magnetic field generated in an inner areaof the magnetic shield member 1500.

In this structure, the exposure processing chamber 4 can be preventedfrom being affected by a magnetic field generated by an external device.Thus, the throughput of the exposure process can be improved. Inaddition, although the magnetic shield member 1500 generates a magneticfield that varies, since the magnetic shield member 1500 is covered bythe magnetic shield member 121, the magnetic shield member 1500 does notmagnetically affect the outside of the apparatus. Thus, the intensity ofthe magnetic field in the exposing device 1 is half or less of that ofthe outside thereof.

Like the foregoing amplifier section 130, the power supply 1501 isdisposed opposite to the reduced pressure conveying chamber 70 of theexposure processing chamber 4. The height of the power supply 1501 isgreater than the height h5 of the holding surface of a semiconductorwafer W on the stage 91. Preferably, the height of the power supply 1501is greater than the height h6 of a loading openings 89 as a conveyingopening for the semiconductor wafer W of the exposure processing chamber4. More preferably, the height of the power supply 1501 is greater thanthe height h7 of an electron beam emitted from a column 100. Otherwise,an electromagnetic wave generated from the power supply 1501 affects anelectron beam.

It is preferred that the magnetic sensor 1502 be disposed outside theexposure processing chamber 4 or at a predetermined position of theinside of the exposure processing chamber 4. As long as a semiconductorwafer W exposed in the exposure processing chamber 4 is prevented frombeing magnetically affected, the magnetic sensor 1505 may be disposedanywhere outside the exposure processing chamber 4 or at a predeterminedposition of the inside of the exposure processing chamber 4. When themagnetic sensor 1502 cannot be disposed in the exposure processingchamber 4, data of magnetic field in the exposure processing chamber 4and data of magnetic field shielded by the coils controlled by thecontrol mechanism 1503 may be stored in a storage mechanism. Based onthe relationship of the stored magnetic data and the magnetic sensor1502 disposed outside the exposure processing chamber 4, the coils maybe controlled.

As shown in FIG. 32, with respect to controls of the Helmholtz coils1500, a left coil 1510, a right coil 1511, an upper coil 1512, and alower coil 1513 are disposed (for convenience, description of a frontcoil and a rear coil will be omitted). Currents that flow in the samedirection (arrow directions in FIG. 37) are supplied from the powersupply 1501 to a pair of coils that face each other, for example theleft coil 1510 and the right coil 1511. Likewise, currents that flow inthe same direction (arrow direction in FIG. 32) are supplied from thepower supply 1501 to another pair of coils that face each other, forexample the upper coil 1512 and the lower coil 1513. Of course, thisapplies to another pair that face each other, for example the front coiland the rear coil. However, with respect to frequency, current value,and/or DC (Direct Current component) value, it is preferred that thecoils be controlled by the control mechanism 1503 in differentcondition, for example the frequency and/or current value of for examplethe left coil 1510 is different from that of the right coil 1511 or thefrequency, current value, and/or DC value of the right coil 1511 and theleft coil 1510 is different from that of the upper coil 1512 and thelower coil 1513 so that the magnetic field at a predetermined position,for example position 0, becomes a predetermined value, for example 0. Inthe foregoing description, for convenience, only the left coil 1510, theright coil 1511, the upper coil 1512, and the lower coil 1513 werecontrolled. However, of course, the coils including the front coil andthe rear coil need to be properly controlled. These coils need to becontrolled on the X, Y, and Z axes so that the magnetic field at thepredetermined position 0 becomes a predetermined value.

When necessary, the Helmholtz coils 1500 need to be controlled based onelectric charges that are present in the static electricity chuck andthat are measured by an ammeter 320 of the static electricity chuck orpre-stored data. In addition, as described above, the Helmholtz coils1500 generate a varying magnetic field. Thus, the Helmholtz coils 1500may generate a magnetic field outside the apparatus. Thus, although themagnetic shield member 121 as a magnetic field suppressing mechanismprevents a magnetic field from entering into the apparatus, the magneticshield member 121 also has a function as a mechanism that prevents amagnetic field of the Helmholtz coils 1500 from diffusing outside theapparatus.

Next, with reference to FIG. 33, a static electricity deflecting deviceaccording to another embodiment of the present invention will bedescribed. For simplicity, in FIG. 33, similar portions to those of theforegoing embodiment will be denoted by similar reference numerals andtheir description will be omitted. As shown in FIG. 33, formed on anupper surface (an upper portion (an electron gun 501 side)) of acylindrical member 612 of the static electricity deflecting device is aconcave portion 1600 as a circular cutout portion. Formed on a lowersurface (a lower portion of FIG. 33 (on a semiconductor wafer W side))of the cylindrical member 612 of the static electricity deflectingdevice is a convex portion 1601 as a circular protrusion portion. Inthis structure, when two static electricity deflecting devices or astatic electricity deflecting device and another member are stackedthrough a support member made of an insulative material, they can beeasily aligned. As a result, maintenance work or mounting work can bequickly and efficiently performed. The concave portion 1600 and/or theconvex portion 1601 is formed the middle of an middle layer 604 to aninner layer 606. Instead, the concave portion 1600 and/or the convexportion 1601 may be formed only in the inner layer 606.

Next, with reference to FIG. 34, a static electricity deflecting deviceaccording to another embodiment of the present invention will bedescribed. For simplicity, in FIG. 34, similar portions to those of theforegoing embodiment will be denoted by similar reference numerals andtheir description will be omitted. As shown in FIG. 34, formed on anupper surface (an upper portion of FIG. 34 (on an electron gun 501side)) of a cylindrical member 612 of the static electricity deflectingdevice is a first concave portion 1600 as a circular cutout portion.Formed on a lower surface (a lower portion of FIG. 34 (on asemiconductor wafer W side)) of the cylindrical member 612 is a secondconcave portion 1602 as a circular cutout portion. In this structure,when two static electricity deflecting devices or a static electricitydeflecting device and another member are stacked through a supportmember made of an insulative material, they can be easily aligned. Thus,maintenance work or mounting work can be quickly and efficientlyperformed. The concave portions 1600 and 1602 are formed from the middleof a middle layer 604 to a inner layer 606. Instead, the concaveportions 1600 and 1602 may be formed only in the inner layer 606.

Next, with reference to FIG. 35, a static electricity deflecting deviceaccording to another embodiment of the present invention will bedescribed. For simplicity, in FIG. 35, similar portions to those of theforegoing embodiment will be denoted by similar reference numerals andtheir description will be omitted. As shown in FIG. 35, formed on anupper surface (an upper portion of FIG. 35 (on an electron gun 501side)) of a cylindrical member 612 of the static electricity deflectingdevice is a first concave portion 1600 as a ring-shaped cutout portion.Formed on a lower surface (a lower portion of FIG. 35 (on asemiconductor wafer W side)) is a second concave portion 1602 as acutout portion. Formed inside the concave portion 1600 and/or the secondconcave portion 1602 is a third concave portion 1603 as a circularcutout portion. Since only a middle layer 604 as an electrical insulatorprotrudes, when two static electricity deflecting devices are stacked,since only their middle layers 604 contact, a support member made of aninsulator can be omitted. Thus, the system can be efficientlystructured. In addition, formed on an outer layer 601 is a fourthconcave portion 1604 as a ring-shaped cutout portion. In this structure,the static electricity deflecting device can be easily supported by asupport member made of an insulative material from an outercircumference of the static electricity deflecting device. The concaveportions 1600, 1602, and 1603 are formed from the middle of a middlelayer 604 to an inner layer 606. Instead, the concave portions 1600,1602, and 1603 may be formed only in the inner layer 606. In theseembodiments, various convex portions and/or concave portions are formedon the upper surface and/or the lower surface of the static electricitydeflecting device. Instead, convex portions and/or concave portions maybe formed in various combinations on the upper surface and/or the lowersurface of the static electricity deflecting device such that staticelectricity deflecting devices efficiently mounted and/or aligned.

Next, a manufacturing method of the static electricity deflecting deviceaccording to an embodiment of the present invention will be described.For simplicity, in FIG. 36, similar portions to those of the foregoingembodiment will be denoted by similar reference numerals and theirdescription will be omitted. As shown in FIG. 36, a predeterminedmember, for example a conductive member 1700, that can contact a voltageinput terminal 605 is disposed on an electron beam passing portion 609side of a inner layer 606 of the static electricity deflecting device.The voltage input terminal 605 is inserted into a voltage input terminalopening 1605 from the outside of an outer layer 601. An edge portion1701 of the voltage input terminal 605 is pressed to the conductivemember 1700. As a result, the voltage input terminal 605 is connected tothe static electricity deflecting device. The edge portion 1701 of thevoltage input terminal 605 has a convex portion 1701, for example aplurality of needle-shaped members, that allow the edge portion 1701 tosecurely electrically contact the conductive member 1700. Thereafter, asshown in FIG. 37, the conductive member 1700 is scraped off for apredetermined thickness. It is preferred that the thickness of theconductive member 1700 to be scraped off be smaller than the thicknessof the deflecting electrode 603. Since at least a part of the conductivemember 1700 is scraped off, it can be said that the conductive member1700 is a sacrifice member.

Thereafter, a deflecting electrode 603 is formed on the inner layer 606on the electron beam passing portion 609 side of the static electricitydeflecting device for a predetermined thickness by the spatter method orplating method. At this point, it is preferred that the deflectingelectrode 603 on the electron beam passing portion 609 side of the innerlayer 606 of the static electricity deflecting device be not unevenlyformed. Thus, when the deflecting electrode 603 is flat against anelectron beam emitted from the electron gun 501, the deflectingelectrode 603 can be prevented from adversely affecting the electronbeam. As another example, after a base film (first film) of thedeflecting electrode 603 is formed, the conductive member 1700 isformed. Thereafter, the voltage input terminal 605 is inserted from theoutside of the outer layer 601 into the voltage input terminal opening1605. The edge portion 1701 of the voltage input terminal 605 is pressedto the conductive member 1700. As a result, the voltage input terminal605 is connected to the static electricity deflecting device.Thereafter, the conductive member 1700 is scraped off for apredetermined thickness. Thereafter, the deflecting electrode 603 as theforegoing main base film (second film) is formed on the inner layer 606on the electron beam passing portion 609 side of the static electricitydeflecting device by the spatter method or the plating method.

Next, with reference to FIG. 38, a static electricity deflecting deviceaccording to another embodiment of the present invention will bedescribed. For simplicity, in FIG. 38, similar portions to those of theforegoing embodiment will be denoted by similar reference numerals andtheir description will be omitted. As shown in FIG. 38, a space portion608 of a cylindrical member 612 of the static electricity deflectingdevice is formed in an elliptic shape. In addition, elliptic concaveportions 1800 are formed at a plurality of positions, for example twopositions. A part of a deflecting electrode 603 is uniformly formed fora predetermined portion of the space portion 608. In addition, a firstconductive film 602 is formed nearly from the end of the concave portion1800. Since the space portion 608 is formed in such an elliptic shape,the diameter of the static electricity deflecting device can bedecreased. In addition, since the concave portions 1800 allow thesubstantial volume of the space portion 608 to be provided, resulting inpreventing an abnormality such as abnormal discharging from occurring.

Next, with reference to FIG. 39, a static electricity deflecting deviceaccording to another embodiment of the present invention will bedescribed. For simplicity, in FIG. 39, similar portions to those of theforegoing embodiment will be denoted by similar reference numerals andtheir description will be omitted. As shown in FIG. 39, a cylindricalmember 612 of the static electricity deflecting device is composed of aninner layer 1800 made of a conductive material for example a metal andan outer layer 601 made of an insulative material, for example ceramic.In this example, the static electricity deflecting device has eightdeflecting electrodes. As shown in FIG. 40, a connection portion 607 isa groove radially formed from the center of the static electricitydeflecting device. The outer layer 601 is visible from the center of thestatic electricity deflecting device. In addition, since the material ofthe inner layer 1800 is substantially different from the material of theouter layer 601, they are unified by connecting or brazing them. In thisstructure, the insulative area of one connection portion 607 (groove)becomes small in comparison with that of the related art. Since theinner layer 1800 is made of a metal, the groove can be easily formed. Inaddition, since the groove can be easily formed, the aspect ratio (thelength of the groove/the width of the groove) of the inner layer 1800 tothe outer layer 601 as an insulative member become large. Thus,deflecting electrodes that less drift can be formed.

Next, with reference to FIG. 41, a static electricity deflecting deviceaccording to another embodiment of the present invention will bedescribed. For simplicity, in FIG. 41, similar portions to those of theforegoing embodiment will be denoted by similar reference numerals andtheir description will be omitted. As shown in FIG. 41, a connectionportion 607 of a cylindrical member 612 of the static electricitydeflecting device is radially formed as a groove having a plurality ofstairs from the center of the static electricity deflecting device.Thus, since grooves are radially formed from the center of the staticelectricity deflecting device, the outer layer 601 is not visible fromthe center of the static electricity deflecting device. In thisstructure, the aspect ratio (the length of the groove/the width of thegroove) becomes large. Thus, deflecting electrodes that less drift canbe formed.

Next, with reference to FIG. 42, a static electricity deflecting deviceaccording to another embodiment of the present invention will bedescribed. For simplicity, in FIG. 42, similar portions to those of theforegoing embodiment will be denoted by similar reference numerals andtheir description will be omitted. As shown in FIG. 42, a connectionportion 607 of a cylindrical member 612 of the static electricitydeflecting device is composed of a groove that has a predeterminedlength and a predetermined angle (first angle), for example θ1, measuredfrom a radial line from the center of the static electricity deflectingdevice, and a grove that is connected the foregoing groove and the outerlayer 601 and that has a predetermined angle (first angle), for example−θ2, measured from the radial line from the center of the staticelectricity deflecting device. Thus, since grooves are radially formedfrom the center of the static electricity deflecting device, the outerlayer 601 is not visible from the center of the static electricitydeflecting device. In this structure, the aspect ratio (the length ofthe groove/the width of the groove) becomes large. Thus, deflectingelectrodes that less drift can be formed.

Next, with reference to FIG. 43, a static electricity deflecting deviceaccording to another embodiment of the present invention will bedescribed. For simplicity, in FIG. 43, similar portions to those of theforegoing embodiment will be denoted by similar reference numerals andtheir description will be omitted. As shown in FIG. 43, in an innerlayer 1800, a concave portion 1801 is formed such that staticelectricity deflecting devices can be easily stacked or a staticelectricity deflecting device can be easily aligned with a supportmember. In this embodiment, the thickness of the inner layer 1800 issmaller than the thickness of an outer layer 601. Instead, the concaveportion 1801 may be formed from the middle of the outer layer 601 to theinner layer 1800. A connection portion 607 of a cylindrical member 612of the static electricity deflecting device is radially formed as agroove having a plurality of stairs from the center of the staticelectricity deflecting device. Thus, since grooves are radially formedfrom the center of the static electricity deflecting device, the outerlayer 601 is not visible from the center of the static electricitydeflecting device. In this structure, the aspect ratio (the length ofthe groove/the width of the groove) becomes large. Thus, deflectingelectrodes that less drift can be formed.

Next, with reference to FIG. 44, a static electricity deflecting deviceaccording to another embodiment of the present invention will bedescribed. For simplicity, in FIG. 44, similar portions to those of theforegoing embodiment will be denoted by similar reference numerals andtheir description will be omitted. As shown in FIG. 44, a cylindricalmember 612 of the static electricity deflecting device is composed of aninner layer 1800 (corresponding to the inner layer 606) made of aconductive material for example a metal, a middle layer 604 made of theforegoing material, and an outer layer 601 made of the foregoingmaterial, for example ceramic. In this example, the static electricitydeflecting device has eight deflecting electrodes. As shown in FIG. 40,a connection portion 607 is a stair-shaped (or radial) groove from thecenter of the static electricity deflecting device. The outer layer 601is not visible from the center of the static electricity deflectingdevice. In addition, since the material of the inner layer 1800 issubstantially different from the material of the outer layer 601, theyare unified by connecting or brazing them. In this structure, theinsulative area of one connection portion 607 (groove) becomes small incomparison with that of the related art. Since the inner layer 1800 ismade of a metal, the groove can be easily formed. In addition, since thegroove can be easily formed, the aspect ratio (the length of thegroove/the width of the groove) of the inner layer 1800 to the outerlayer 601 as an insulative member become large. Thus, deflectingelectrodes that less drift can be formed. In such a manner, the staticelectricity deflecting device can be structured in a combination of theforegoing embodiments without departing from the spirit and scope of thepresent invention.

Next, with reference to FIG. 45, a substrate processing apparatusaccording to another embodiment of the present invention will bedescribed. For simplicity, in FIG. 45, similar portions to those of theforegoing embodiment will be denoted by similar reference numerals andtheir description will be omitted. As shown in FIG. 45, when a magneticfield generating mechanism such as an air vent mechanism, for example anion pump, for example, a coaxial type ion pump, is used, a magneticfield 1900 is generated in a predetermined direction. The magnetic field1900 prevents an electron beam that is emitted by the electron gun 501from traveling straight, thereby causing the electron beam to become abent beam 2002. To suppress such a problem, as deflection compensationmeans that compensates traveling of an electron beam outside theexposure processing chamber 4 and that surrounds a magnetic fieldgeneration source such as an ion pump, for example a motor, a powersupply, an amplifier portion 130, or a control mechanism, a magneticfield suppressing mechanism (third magnetic shield) that surrounds them,for example a magnetic shield member 2001, for example a member made offor example permalloy, magnetic soft iron, magnetic steel iron, Sendust,ferrite, or the like. The magnetic shield member 2001 is designed tocause a moving mechanism (not shown) to compensate the bent portion 2002of the electron beam with a moving mechanism (not shown). The controlmechanism may be designed to automatically control the moving mechanismto move the magnetic shield member 2001. Instead, the magnetic shieldmember 2001 may be manually aligned.

When a varying magnetic field suppressing mechanism (third magneticfield), for example, a magnetic shield member that electromagneticallyshields a substance, for example, a Helmholtz coil is used for themagnetic shield member 2001 instead of the foregoing fixed shield, themoving mechanism may be omitted. When a magnetic source generates a DCmagnetic field, such a shield may be used. The column 100 may besurrounded by this shield.

As the relationship of the magnetic shield member 1500, which is thesecond magnetic shield, and the magnetic shield member 2001, which isthe third magnetic shield, one of the second magnetic shield and thethird magnetic shield may be disposed outside the other of the secondmagnetic shield and the third magnetic shield. For example, the thirdmagnetic shield may be disposed inside the second magnetic shield. Thesecond magnetic shield may be disposed inside the third magnetic shield.Instead, the third magnetic shield may be disposed inside the secondmagnetic shield and the second magnetic shield is disposed inside thethird magnetic shield as a mixed arrangement. However, it is preferredthat the first magnetic shield, which is the foregoing fixed shield, bedisposed outside the second magnetic shield and the third magneticshield to prevent a magnetic field from being generated outside thesecond magnetic shield and the third magnetic shield.

As described above, in this embodiment, since a static electricitydeflecting device of the column in the electron beam irradiatingapparatus disposed in the exposure processing chamber is provided withspace portions as electron capturing areas, electrons that entered intothe space portions do not easily return to the electron beam passingsection. Even if charge-up occurs due to electrons that entered into thespace portions, electrons are quickly discharged by the first conductivefilm. Thus, an electron beam is not deflected to other than a desiredposition. As a result, the exposure accuracy does not deteriorate due tocharge-up.

Although the present invention has been shown and described with respectto a best mode embodiment thereof, it should be understood by thoseskilled in the art that the foregoing and various other changes,omissions, and additions in the form and detail thereof may be madetherein without departing from the spirit and scope of the presentinvention. For example, in the foregoing embodiments, a semiconductorwafer was described as a substrate under processing. However, thesubstrate under processing may be a plate shape substrate such as an LCDsubstrate. In addition, the shape of the space portions was described asa circular shape having curved portions. However, the present inventionis not limited to such an example.

1. A substrate processing apparatus, comprising: a light source forirradiating a substrate to be processed with an electron beam; and aplurality of lenses which are disposed between the light source and thesubstrate to be processed, whose thicknesses gradually decreasing in atraveling direction of the electron beam.